生命周期: | Obsolete | 零件包装代码: | TO-247 |
包装说明: | FLANGE MOUNT, R-PSFM-G2 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.65 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 60 A | 集电极-发射极最大电压: | 300 V |
配置: | SINGLE | 最大降落时间(tf): | 220 ns |
门极发射器阈值电压最大值: | 5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PSFM-G2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 200 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 600 ns | 标称接通时间 (ton): | 65 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGH40N50 | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 75A I(C) | TO-247 | |
IXGH40N50A | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 500V V(BR)CES | 75A I(C) | TO-247 | |
IXGH40N60 | IXYS |
获取价格 |
Low VCE(sat) IGBT, High speed IGBT | |
IXGH40N60A | IXYS |
获取价格 |
Low VCE(sat) IGBT, High speed IGBT | |
IXGH40N60A3D1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, | |
IXGH40N60B | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH40N60B2 | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH40N60B2D1 | IXYS |
获取价格 |
HiPerFAST IGBT | |
IXGH40N60C | IXYS |
获取价格 |
HiPerFAST IGBT Lightspeed Series | |
IXGH40N60C2 | IXYS |
获取价格 |
C2-Class High Speed IGBTs |