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IXGH48N60C3C1 PDF预览

IXGH48N60C3C1

更新时间: 2024-09-17 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
7页 261K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGH48N60C3C1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.59JESD-609代码:e1
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)Base Number Matches:1

IXGH48N60C3C1 数据手册

 浏览型号IXGH48N60C3C1的Datasheet PDF文件第2页浏览型号IXGH48N60C3C1的Datasheet PDF文件第3页浏览型号IXGH48N60C3C1的Datasheet PDF文件第4页浏览型号IXGH48N60C3C1的Datasheet PDF文件第5页浏览型号IXGH48N60C3C1的Datasheet PDF文件第6页浏览型号IXGH48N60C3C1的Datasheet PDF文件第7页 
Preliminary Technical Information  
GenX3TM 600V IGBT  
w/ SiC Anti-Parallel  
Diode  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 48A  
2.5V  
= 38ns  
IXGH48N60C3C1  
High Speed PT IGBT for  
40 - 100kHz Switching  
TO-247  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
VGES  
VGEM  
IC25  
IC110  
IF110  
ICM  
Continuous  
±20  
±30  
75  
V
V
E
( TAB )  
Transient  
G = Gate  
E = Emitter  
C
= Collector  
TC = 25°C (Limited by Leads)  
TC = 110°C  
A
TAB = Collector  
48  
A
TC = 110°C  
20  
A
TC = 25°C, 1ms  
TC = 25°C  
250  
30  
A
Features  
IA  
A
z Optimized for Low Switching Losses  
z Square RBSOA  
EAS  
TC = 25°C  
300  
mJ  
SSOA  
(RBSOA)  
PC  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
TC = 25°C  
ICM = 100  
@ < VCES  
300  
A
z Anti-Parallel Schottky Diode  
z Fast Switching  
z Avalanche Rated  
z International Standard Package  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Advantages  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
z High Power Density  
z Low Gate Drive Requirement  
TSOLD  
FC  
Mounting Torque  
1.13/10  
6
Nm/lb.in  
g
Weight  
Applications  
z High Frequency Power Inverters  
z UPS  
z Motor Drives  
Symbol  
Test Conditions  
Characteristic Values  
z SMPS  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.5  
V
VCE = VCES, VGE = 0V  
50 μA  
1.75 mA  
TJ = 125°C  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
TJ = 125°C  
2.3  
1.8  
2.5  
V
V
DS100139A(06/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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