Datasheet > IXGH48N60B3D1

IXGH48N60B3D1

更新时间： 2024-09-17 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	228K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

获取价格

技术参数
数据手册

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IXGH48N60B3D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.1
Base Number Matches：	1

IXGH48N60B3D1 数据手册

Preliminary Technical Information

GenX3^TM600V IGBT

with Diode

V_CES= 600V

I_C110= 48A

V_CE(sat)≤ 1.8V

IXGH48N60B3D1

Medium speed low Vsat PT

IGBTs 5-40 kHz switching

TO-247(IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

( TAB )

I_C110

I_D110

T_C= 110°C

G = Gate

E = Emitter

= Collector

I_CM

T_C= 25°C, 1ms

280

TAB = Collector

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 120

(RBSOA)

Clamped inductive load @ ≤ 600V

P_C

T_C= 25°C

300

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

^zOptimized for low conduction and

switching losses

-55 ... +150

^zSquare RBSOA

T_L

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

^zAnti-parallel ultra fast diode

^zInternational standard package

T_SOLD

M_d

Mounting torque

1.13/10

Nm/lb.in.

Advantages

Weight

^zHigh power density

^zLow gate drive requirement

Applications

^zPower Inverters

^zUPS

Symbol Test Conditions

Characteristic Values

^zMotor Drives

^zSMPS

(T_J= 25°C unless otherwise specified)

Min.

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

600

3.0

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

5.0

I_CES

V_CE= V_CES

V_GE= 0V

300 μA

1.75 mA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= 32A, V_GE= 15V, Note 1

1.8

DS100036(09/08)

12 3 4 5 6 7 8

中文翻译

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