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IXGH40N120B2D1 PDF预览

IXGH40N120B2D1

更新时间: 2024-11-18 11:14:07
品牌 Logo 应用领域
IXYS 二极管双极性晶体管
页数 文件大小 规格书
7页 214K
描述
High Voltage IGBTs w/Diode

IXGH40N120B2D1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.41外壳连接:COLLECTOR
最大集电极电流 (IC):75 A集电极-发射极最大电压:1200 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):270 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):380 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):770 ns
标称接通时间 (ton):79 nsBase Number Matches:1

IXGH40N120B2D1 数据手册

 浏览型号IXGH40N120B2D1的Datasheet PDF文件第2页浏览型号IXGH40N120B2D1的Datasheet PDF文件第3页浏览型号IXGH40N120B2D1的Datasheet PDF文件第4页浏览型号IXGH40N120B2D1的Datasheet PDF文件第5页浏览型号IXGH40N120B2D1的Datasheet PDF文件第6页浏览型号IXGH40N120B2D1的Datasheet PDF文件第7页 
High Voltage IGBTs  
w/Diode  
VCES = 1200V  
IC110 = 40A  
VCE(sat) 3.5V  
tfi(typ) = 140ns  
IXGH40N120B2D1  
IXGT40N120B2D1  
TO-247 (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TC = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
1200  
1200  
V
V
VGES  
VGEM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
C (TAB)  
C
E
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Limited by Lead)  
TC = 110°C  
TC = 110°C  
75  
40  
25  
A
A
A
A
TO-268 (IXGT)  
TC = 25°C, 1ms  
200  
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM  
=
80  
A
V
@ 0.8 VCES  
G
E
PC  
TC = 25°C  
380  
W
C (TAB)  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate  
E = Emitter  
C
= Collector  
TAB = Collector  
-55 ... +150  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Md  
Mounting Torque (TO-247)  
1.13/10  
Nm/lb.in.  
Features  
Weight  
TO-247  
TO-268  
6
4
g
g
z International Standard Packages  
z IGBT and Anti-Parallel FRED for  
Resonant Power Supplies  
- Induction Heating  
- Rice Cookers  
z Square RBSOA  
z Fast Recovery Expitaxial Diode  
(FRED)  
- Soft Recovery with Low IRM  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES, VGE = 0V  
100 μA  
mA  
±100 nA  
3.5  
Advantages  
TJ = 125°C  
3
z High Power Density  
z Low Gate Drive Requirement  
IGES  
VCE = 0V, VGE = ± 20V  
VCE(sat)  
IC = 40A, VGE = 15V, Note 1  
2.9  
V
© 2009 IXYS CORPORATION, All RrightsRreserved  
DS99555B(02/09)  

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TRANSISTOR | IGBT | N-CHAN | 300V V(BR)CES | 60A I(C) | TO-247SMD