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IXGH36N60B3D4 PDF预览

IXGH36N60B3D4

更新时间: 2024-11-18 11:14:07
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
7页 201K
描述
GenX3 600V IGBT

IXGH36N60B3D4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:TO-247AD, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.8
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):36 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE最大降落时间(tf):160 ns
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JEDEC-95代码:TO-247ADJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):250 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):350 ns
标称接通时间 (ton):45 ns

IXGH36N60B3D4 数据手册

 浏览型号IXGH36N60B3D4的Datasheet PDF文件第2页浏览型号IXGH36N60B3D4的Datasheet PDF文件第3页浏览型号IXGH36N60B3D4的Datasheet PDF文件第4页浏览型号IXGH36N60B3D4的Datasheet PDF文件第5页浏览型号IXGH36N60B3D4的Datasheet PDF文件第6页浏览型号IXGH36N60B3D4的Datasheet PDF文件第7页 
GenX3TM 600V IGBT  
VCES = 600V  
IC110 = 36A  
VCE(sat) 1.8V  
IXGH36N60B3D4  
Medium speed low Vsat PT  
IGBT for 5-40kHz switching  
TO-247 AD (IXGH)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
TAB  
C
E
IC110  
IF110  
ICM  
TC = 110°C  
36  
10  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
200  
G = Gate  
E = Emitter  
C
= Collector  
SSOA  
(RBSOA)  
VGE= 15V, TJ = 125°C, RG = 5Ω  
Clamped inductive load @VCE 600V  
ICM = 80  
A
TAB = Collector  
PC  
TC = 25°C  
250  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z Optimized for low conduction and  
switching losses  
-55 ... +150  
z Square RBSOA  
Md  
Mounting torque  
1.13/10  
Nm/lb.in.  
z Anti-parallel ultra fast diode  
z International standard package  
TL  
TSOLD  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10s  
300  
260  
°C  
°C  
Weight  
6
g
Advantages  
z High power density  
z Low gate drive requirement  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ.  
Max.  
z Power Inverters  
z UPS  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
600  
3.0  
V
V
z Motor Drives  
z SMPS  
5.0  
75  
ICES  
VCE = VCES  
VGE = 0V  
μA  
z PFC Circuits  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
TJ = 125°C  
500 μA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 30A, VGE = 15V, Note 1  
1.5  
1.8  
V
DS99725B(06/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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