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IXGH38N60 PDF预览

IXGH38N60

更新时间: 2024-11-17 22:45:11
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
2页 49K
描述
Ultra-Low VCE(sat) IGBT

IXGH38N60 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-247AD
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.84
外壳连接:COLLECTOR最大集电极电流 (IC):75 A
集电极-发射极最大电压:600 V配置:SINGLE
最大降落时间(tf):1100 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:200 W最大功率耗散 (Abs):200 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1800 ns
标称接通时间 (ton):200 nsVCEsat-Max:1.8 V
Base Number Matches:1

IXGH38N60 数据手册

 浏览型号IXGH38N60的Datasheet PDF文件第2页 
Ultra-Low VCE(sat) IGBT  
IXGH 38N60 VCES  
IC25  
= 600 V  
= 76 A  
VCE(sat) = 1.8 V  
Symbol  
TestConditions  
Maximum Ratings  
TO-247 AD  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
IC25  
IC90  
ICM  
TC = 25°C  
76  
38  
A
A
A
G = Gate,  
E = Emitter,  
C = Collector,  
TAB = Collector  
TC = 90°C  
TC = 25°C, 1 ms  
152  
SSOA  
V
GE= 15 V, TVJ = 125°C, RG = 10 Ω  
ICM = 76  
A
(RBSOA)  
Clamped inductive load, L = 100 µH  
@ 0.8 VCES  
PC  
TC = 25°C  
200  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
l
International standard package  
JEDEC TO-247 AD  
TJM  
Tstg  
-55 ... +150  
2nd generation HDMOSTM process  
Low VCE(sat)  
l
l
Md  
Mounting torque (M3)  
1.13/10 Nm/lb.in.  
- for minimum on-state conduction  
Weight  
6
g
losses  
l
l
High current handling capability  
MOS Gate turn-on  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drive simplicity  
Applications  
l
AC motor speed control  
DC servo and robot drives  
DC choppers  
Uninterruptible power supplies (UPS)  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
l
l
l
l
Switch-mode and resonant-mode  
BVCES  
VGE(th)  
IC = 250 µA, VGE = 0 V  
IC = 250 µA, VCE = VGE  
600  
2.5  
V
V
power supplies  
5
Advantages  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 µA  
mA  
1
l
Easy to mount with 1 screw  
(isolated mounting screw hole)  
Low losses, high efficiency  
High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
1.8  
l
l
VCE(sat)  
IC = IC90, VGE = 15 V  
V
93025C (7/94)  
© 1996 IXYS All rights reserved  

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