Datasheet > IGW60T120

IGW60T120

更新时间： 2024-02-23 11:03:15

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
12页	410K
描述
Low Loss IGBT in Trench and Fieldstop technology

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数据手册
替代型号

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IGW60T120 数据手册

IGW60T120

TrenchStop Series

Low Loss IGBT in Trench and Fieldstop technology

•

Best in class TO247

Short circuit withstand time – 10µs

Designed for :

- Frequency Converters

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI

P-TO-247-3-1

(TO-247AC)

•

Low Gate Charge

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Package

TO-247AC

Ordering Code

IGW60T120

1200V

60A

1.9V

Q67040-S4521

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

1200

100

T_C= 90°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_{Cpul s}

150

V_CE≤ 1200V, T_j≤ 150°C

Gate-emitter voltage

V_{G E}

t_SC

±20

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

Power dissipation

µs

P_{t ot}

375

T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j

-40...+150

-55...+150

260

°C

T_stg

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Preliminary / Rev. 1 Jul-02

Power Semiconductors

12 3 4 5 6 7...12

中文翻译

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IGW60T120 替代型号

型号	品牌	替代类型	描述	数据表
IRG4PC50WPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR
IRG4PC50UDPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IGW40T120	INFINEON	类似代替	Low Loss IGBT in Trench and Fieldstop technology

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