Datasheet > IXGH32N60C

IXGH32N60C

更新时间： 2024-09-17 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
5页	202K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

获取价格

数据手册

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IXGH32N60C 数据手册

HiPerFAST^TMIGBT

Lightspeed^TMSeries

IXGH 32N60C

IXGT 32N60C

V_CES

I_C25

= 600 V

= 60 A

V_CE(sat)typ= 2.1 V

t_{fi typ}= 55 ns

TO-268

(IXGT)

Symbol

TestConditions

MaximumRatings

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MW

C (TAB)

V_GES

V_GEM

Continuous

Transient

±20

±30

I_C25

I_C110

I_CM

T_C= 25°C

TO-247 AD

(IXGH)

T_C= 110°C

T_C= 25°C, 1 ms

120

C (TAB)

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 10 W

Clamped inductive load, L = 100 mH

I_CM= 64

@ 0.8 V_CES

P_C

T_C= 25°C

200

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

• Internationalstandardpackages

JEDEC TO-247 and surface

mountableTO-268

M_d

Mountingtorque(M3)

1.13/10 Nm/lb.in.

Weight

TO-247 AD

TO-268

• Highcurrenthandlingcapability

• Latest generation HDMOS^TMprocess

• MOS Gate turn-on

- drive simplicity

Applications

Symbol

BV_CES

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• PFC circuits

• Uninterruptiblepowersupplies(UPS)

• Switched-modeandresonant-mode

powersupplies

• AC motor speed control

• DC servo and robot drives

• DC choppers

I_C= 250 mA, V_GE= 0 V

I_C= 250 mA, V_CE= V_GE

600

2.5

V_GE(th)

I_CES

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 150°C

200

Advantages

I_GES

V_CE= 0 V, V_GE= ±20 V

±100

• High power density

• Very fast switching speeds for high

frequencyapplications

V_CE(sat)

I_C= I_C110, V_GE= 15 V

2.1

2.5

IXYS reserves the right to change limits, test conditions, and dimensions.

97538B(7/00)

1 - 4

12 3 4 5

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与IXGH32N60C相关器件

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