Datasheet > 晶体管 > IGBT> IXGH35N120

IXGH35N120

更新时间： 2024-11-04 22:11:51

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
2页	56K
描述
IGBT Lightspeed Series

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中文翻译

获取价格

数据手册

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IXGH35N120 数据手册

Advance Technical Information

IXGH 35N120C V_CES= 1200 V

IGBT

Lightspeed Series

IXGT 35N120C I_C25

70 A

V_CE(sat)= 4.0 V

t_fi(typ)= 115 ns

Symbol

TestConditions

MaximumRatings

TO-268

(IXGT)

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C; R_GE= 1 MW

V_GES

V_GEM

Continuous

Transient

±20

±30

(TAB)

I_C25

I_C90

I_CM

T_C= 25°C

TO-247 AD (IXGH)

T_C= 90°C

T_C= 25°C, 1 ms

140

SSOA

(RBSOA)

V_GE= 15 V, T_VJ= 125°C, R_G= 5 W

Clampedinductiveload

I_CM= 90

@ 0.8 V_CES

C (TAB)

P_C

T_C= 25°C

300

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Maximum Lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

Maximum Tab temperature for soldering SMD devices for 10 s

300

260

°C

Features

M_d

Mountingtorque(M3)

1.13/10 Nm/lb.in.

• Internationalstandardpackages

JEDEC TO-268 surface and

JEDEC TO-247 AD

Weight

TO-247 AD

TO-268

• Low switching losses

• MOS Gate turn-on

- drive simplicity

Applications

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• AC motor speed control

• DC servo and robot drives

• DC choppers

• Uninterruptiblepowersupplies(UPS)

• Switched-modeandresonant-mode

powersupplies

BV_CES

V_GE(th)

I_C= 1 mA, V_GE= 0 V

I_C= 750 mA, V_CE= V_GE

1200

2.5

I_CES

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

250 mA

Advantages

• High power density

I_GES

V_CE= 0 V, V_GE= ±20 V

±100 nA

• Suitableforsurfacemounting

• Easy to mount with 1 screw,

(isolatedmountingscrewhole)

V_CE(sat)

I_C= I_C90, V_GE= 15 V

4.0

T_J= 125°C

3.2

IXYS reserves the right to change limits, test conditions, and dimensions.

98717(4/18/2000)

1 - 2

中文翻译

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