Datasheet > IXGH36N60B3D4

IXGH36N60B3D4

更新时间： 2024-09-16 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	228K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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技术参数
数据手册

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IXGH36N60B3D4 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

IXGH36N60B3D4 数据手册

GenX3^TM600V IGBT

V_CES= 600V

I_C110= 36A

V_CE(sat)≤ 1.8V

IXGH36N60B3D4

Medium speed low Vsat PT

IGBT for 5-40kHz switching

TO-247 AD (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

600

V_GES

V_GEM

Continuous

Transient

±20

±30

TAB

I_C110

I_F110

I_CM

T_C= 110°C

T_C= 25°C, 1ms

200

G = Gate

E = Emitter

= Collector

SSOA

(RBSOA)

V_GE= 15V, T_J= 125°C, R_G= 5Ω

Clamped inductive load @V_CE≤ 600V

I_CM= 80

TAB = Collector

P_C

T_C= 25°C

250

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

^zOptimized for low conduction and

switching losses

-55 ... +150

^zSquare RBSOA

M_d

Mounting torque

1.13/10

Nm/lb.in.

^zAnti-parallel ultra fast diode

^zInternational standard package

T_L

T_SOLD

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

260

°C

Weight

Advantages

^zHigh power density

^zLow gate drive requirement

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

^zPower Inverters

^zUPS

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

600

3.0

^zMotor Drives

^zSMPS

5.0

I_CES

V_CE= V_CES

V_GE= 0V

μA

^zPFC Circuits

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

T_J= 125°C

500 μA

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

1.5

1.8

DS99725B(06/08)

12 3 4 5 6 7 8

中文翻译

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