Datasheet > IXGH36N60A3D4

IXGH36N60A3D4

更新时间： 2024-11-06 11:14:07

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
7页	197K
描述
GenX3 600V IGBT with Diode

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中文翻译

获取价格

数据手册
替代型号

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IXGH36N60A3D4 数据手册

Preliminary Technical Information

GenX3^TM600V IGBT

with Diode

V_CES= 600V

I_C110= 36A

V_CE(sat)≤ 1.4V

IXGH36N60A3D4

Ultra Low Vsat PT IGBT for

up to 5kHz switching

TO-247 (IXGH)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

600

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

(TAB)

I_C110

I_F110

T_C= 110°C

G = Gate

= Collector

E = Emitter

TAB = Collector

I_CM

T_C= 25°C, 1ms

200

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 5Ω

I_CM= 60

(RBSOA)

Clamped inductive load @ ≤ 600V

Features

P_C

T_C= 25°C

220

^zOptimized for low conduction losses

^zSquare RBSOA

T_J

-55 ... +150

150

°C

T_JM

T_stg

^zAnti-parallel ultra fast diode

^zInternational standard package

-55 ... +150

T_L

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

Advantages

T_SOLD

M_d

Mounting torque

1.13/10

6.0

Nm/lb.in.

^zHigh power density

^zLow gate drive requirement

Weight

Applications

^zPower Inverters

^zUPS

^zMotor Drives

^zSMPS

^zPFC Circuits

Symbol Test Conditions

Characteristic Values

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

^zInrush Current Protection Circuits

(T_J= 25°C unless otherwise specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.0

V_CE= 0.8 • V_CES

V_GE= 0V

75 μA

500 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= 30A, V_GE= 15V, Note 1

1.4

DS99724A(07/08)

12 3 4 5 6 7

中文翻译

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IXGH36N60A3D4 替代型号

型号	品牌	替代类型	描述	数据表
IXGH31N60D1	IXYS	类似代替	Ultra-Low V IGBT with Diode
IXGH32N60AU1	IXYS	类似代替	HiPerFAST IGBT with Diode Combi Pack

与IXGH36N60A3D4相关器件

型号	品牌	获取价格	描述	数据表
IXGH36N60B3	IXYS	获取价格	GenX3 600V IGBT
IXGH36N60B3	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH36N60B3C1	IXYS	获取价格	GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
IXGH36N60B3C1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH36N60B3D1	IXYS	获取价格	GenX3 600V IGBT w/ Diode
IXGH36N60B3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH36N60B3D4	IXYS	获取价格	GenX3 600V IGBT
IXGH36N60B3D4	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGH38N60	IXYS	获取价格	Ultra-Low VCE(sat) IGBT
IXGH38N60U1	IXYS	获取价格	Ultra-Low VCE(sat) IGBT with Diode