Datasheet > IXFT100N30X3HV

IXFT100N30X3HV

更新时间： 2024-11-05 19:58:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	298K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFT100N30X3HV 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

IXFT100N30X3HV 数据手册

Advance Technical Information

X3-Class HiPerFET^TM

Power MOSFET

V_DSS= 300V

I_D25= 100A

R_DS(on) 13.5m

IXFT100N30X3HV

IXFH100N30X3

N-Channel Enhancement Mode

Avalanche Rated

TO-268HV (IXFT)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

300

D (Tab)

V_DGR

T_J= 25C to 150C, R_GS= 1M

TO-247 (IXFH)

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

I_DM

T_C= 25C

100

200

T_C= 25C, Pulse Width Limited by T_JM

I_A

T_C= 25C

D (Tab)

D = Drain

E_AS

1.5

G = Gate

S = Source

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

Tab = Drain

480

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



International Standard Packages

Low R_DS(ON)and Q_G



M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in

Avalanche Rated

Weight

TO-268HV

TO-247

Low Package Inductance

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

300

Applications

2.5

4.5



Switch-Mode and Resonant-Mode

100 nA

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives



I_DSS

10 A

750 A



T_J= 125C



Robotics and Servo Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

10.6

13.5 m

DS100862A(11/17)

12 3 4 5 6 7

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