Datasheet > IXFT12N100QHV

IXFT12N100QHV

更新时间： 2024-11-06 14:56:07

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	226K
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功能与特色: 应用: 优点:

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数据手册

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IXFT12N100QHV 数据手册

Advance Technical Information

High Voltage HiPerFET^TM

Power MOSFET

V_DSS= 1000V

I_D25= 12A

IXFT12N100QHV

Q-CLASS

R_DS(on)≤ 1.05Ω

N-Channel Enhancement Mode

Fast Intrinsic Diode

TO-268S

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

D (Tab)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

G = Gate

S = Source

= Drain

Tab = Drain

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

I_A

E_AS

T_C= 25°C

950

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Features

445

Avalanche Rated

Fast Intrinsic Diode

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

High Blocking Voltage

High Voltage Package

Low Drain-to-Tab Capacitance

Low Package Inductance

T_L

T_SOLD

1.6mm (0.062 in.) From Case for 10s

Plastic Body for 10s

300

260

°C

Weight

Advantages

High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1000

2.5

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 4mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

5.5

±100 nA

Power Supplies

DC Choppers

Temperature and Lighting Controls

I_DSS

25 μA

T_J= 125°C

1 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

1.05

DS100531(02/13)

12 3 4 5

中文翻译

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