Advance Technical Information
High Voltage HiPerFETTM
Power MOSFET
VDSS = 1000V
ID25 = 12A
IXFT12N100QHV
Q-CLASS
RDS(on) ≤ 1.05Ω
N-Channel Enhancement Mode
Fast Intrinsic Diode
TO-268S
G
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
D (Tab)
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
G = Gate
S = Source
D
= Drain
Tab = Drain
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
12
48
A
A
IA
EAS
TC = 25°C
TC = 25°C
12
A
950
mJ
dv/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
5
V/ns
W
Features
445
z
Avalanche Rated
Fast Intrinsic Diode
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
°C
°C
°C
z
z
High Blocking Voltage
High Voltage Package
Low Drain-to-Tab Capacitance
Low Package Inductance
z
z
z
TL
TSOLD
1.6mm (0.062 in.) From Case for 10s
Plastic Body for 10s
300
260
°C
°C
Weight
4
g
Advantages
z
High Power Density
Easy to Mount
Space Savings
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
1000
2.5
Typ.
Max.
Applications
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 4mA
VGS = ±20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
5.5
z
±100 nA
z
Power Supplies
DC Choppers
Temperature and Lighting Controls
IDSS
25 μA
z
TJ = 125°C
1 mA
z
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1.05
Ω
DS100531(02/13)
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