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IXFT12N100QHV PDF预览

IXFT12N100QHV

更新时间: 2024-02-23 09:10:48
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 226K
描述
功能与特色: 应用: 优点:

IXFT12N100QHV 数据手册

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Advance Technical Information  
High Voltage HiPerFETTM  
Power MOSFET  
VDSS = 1000V  
ID25 = 12A  
IXFT12N100QHV  
Q-CLASS  
RDS(on) 1.05Ω  
N-Channel Enhancement Mode  
Fast Intrinsic Diode  
TO-268S  
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
D (Tab)  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
12  
48  
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
12  
A
950  
mJ  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
5
V/ns  
W
Features  
445  
z
Avalanche Rated  
Fast Intrinsic Diode  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
z
z
High Blocking Voltage  
High Voltage Package  
Low Drain-to-Tab Capacitance  
Low Package Inductance  
z
z
z
TL  
TSOLD  
1.6mm (0.062 in.) From Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Weight  
4
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
2.5  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 4mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
z
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
5.5  
z
±100 nA  
z
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
IDSS  
25 μA  
z
TJ = 125°C  
1 mA  
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
1.05  
Ω
DS100531(02/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  

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