5秒后页面跳转
IXFT12N90Q PDF预览

IXFT12N90Q

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
3页 139K
描述
功能与特色: 应用: 优点:

IXFT12N90Q 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.32其他特性:AVALANCHE RATED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:900 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-268AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFT12N90Q 数据手册

 浏览型号IXFT12N90Q的Datasheet PDF文件第2页浏览型号IXFT12N90Q的Datasheet PDF文件第3页 
HiPerFETTM  
Power MOSFETs  
Q Class  
IXFH 12N90Q VDSS  
IXFT 12N90Q ID25  
= 900 V  
= 12 A  
= 0.9 W  
RDS(on)  
N-Channel Enhancement Mode  
Avalanche Rated  
trr £ 200 ns  
Low Qg, High dv/dt  
Preliminary data sheet  
Symbol  
TestConditions  
MaximumRatings  
TO-247 AD (IXFH)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
900  
900  
V
V
TJ = 25°C to 150°C; RGS = 1 MW  
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
ID25  
IDM  
TC = 25°C  
12  
48  
A
A
TC = 25°C,  
pulse width limited by TJM  
IAR  
TC = 25°C  
12  
30  
5
A
mJ  
EAR  
TC = 25°C  
TO-268 (D3) ( IXFT)  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
V/ns  
PD  
TC = 25°C  
300  
W
G
S
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
G = Gate  
S = Source  
D
= Drain  
TL  
1.6 mm (0.063 in) from case for 10 s  
Mountingtorque  
300  
°C  
TAB = Drain  
Md  
1.13/10  
Nm/lb.in.  
Weight  
TO-247AD  
TO-268  
6
4
g
g
Features  
• IXYS advanced low Qg process  
• Low gate charge and capacitances  
- easier to drive  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min.  
typ.  
max.  
- faster switching  
• Internationalstandardpackages  
• Low RDS (on)  
• UnclampedInductiveSwitching(UIS)  
rated  
VDSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 4 mA  
900  
V
V
VGS(th)  
2.5  
5.5  
• MoldingepoxiesmeetUL94V-0  
flammabilityclassification  
IGSS  
VGS = ±20 VDC, VDS = 0  
±100  
nA  
IDSS  
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
50  
1
mA  
mA  
Advantages  
• Easy to mount  
• Space savings  
• Highpowerdensity  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
0.9  
W
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98572(11/98)  
1 - 2  

与IXFT12N90Q相关器件

型号 品牌 获取价格 描述 数据表
IXFT13N100 IXYS

获取价格

Power Field-Effect Transistor, 13A I(D), 1000V, 0.9ohm, 1-Element, N-Channel, Silicon, Met
IXFT13N80Q IXYS

获取价格

HiPerFET Power MOSFETs Q Class
IXFT13N90 IXYS

获取价格

HiPerFET Power MOSFETs
IXFT140N10P IXYS

获取价格

PolarHV HiPerFET Power MOSFETs
IXFT140N10P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFT140N20X3HV LITTELFUSE

获取价格

超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘
IXFT14N100 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 14A I(D) | TO-268
IXFT14N100Q IXYS

获取价格

Power Field-Effect Transistor, 14A I(D), 1000V, 0.75ohm, 1-Element, N-Channel, Silicon, Me
IXFT14N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFT14N80P LITTELFUSE

获取价格

功能与特色: 优点: 应用: