Datasheet > IXFT10N100Q

IXFT10N100Q

更新时间： 2024-10-01 04:01:27

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	146K
描述
HiPerFETTM Power MOSFETs Q Class

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中文翻译

获取价格

数据手册

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IXFT10N100Q 数据手册

HiPerFET^TM

Power MOSFETs

Q Class

V_DSSI_D25R_DS(on)

IXFH/IXFT12N100Q

IXFH/IXFT10N100Q

1000 V12 A 1.05 Ω

1000 V10 A 1.20 Ω

t_rr≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated

Low Q_g,High dv/dt

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

1000

V_GS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

12N100Q

10N100Q

12N100Q

10N100Q

T_C= 25°C,

TO-268 (D3) ( IXFT)

pulse width limited by T_JM

I_AR

T_C= 25°C

12N100Q

10N100Q

E_AR

(TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

G = Gate

= Drain

S = Source

TAB = Drain

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

°C

Features

M_d

1.13/10 Nm/lb.in.

IXYS advanced low Q_gprocess

Low gate charge and capacitances

- easier to drive

Weight

TO-247 AD

TO-268

Symbol

TestConditions

Characteristic Values

- faster switching

(T_J= 25°C, unless otherwise specified)

International standard packages

Low R_{DS (on)}

Unclamped Inductive Switching (UIS)

rated

min.

typ.

max.

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 4 mA

1000

V_GS(th)

2.5

5.5

Molding epoxies meet UL 94 V-0

flammability classification

I_GSS

V_GS= ±20 V_DC, V_DS= 0

±100

Advantages

I_DSS

V_DS= 0.8 • V_DSS

V_GS= 0 V

T = 25°C

µA

T_J^J= 125°C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

12N100Q

10N100Q

1.05

1.20

Ω

High power density

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

97539D(12/02)

12 3 4

中文翻译

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