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IXFT12N100F PDF预览

IXFT12N100F

更新时间: 2024-11-17 22:51:43
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 101K
描述
HiPerRF Power MOSFETs

IXFT12N100F 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-268AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:8.53Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (ID):12 A
最大漏源导通电阻:1.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-268AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):48 A认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFT12N100F 数据手册

 浏览型号IXFT12N100F的Datasheet PDF文件第2页 
Advance Technical Information  
HiPerRFTM  
Power MOSFETs  
F-Class: MegaHertz Switching  
IXFH12N100F VDSS  
IXFT 12N100F ID25  
= 1000 V  
12 A  
=
RDS(on) = 1.05 Ω  
t 250 ns  
rr  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
TO-247AD(IXFH)  
Symbol  
TestConditions  
Maximum Ratings  
(TAB)  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
= 25°C to 150°C; R = 1 MΩ  
1000  
1000  
V
V
J
J
GS  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-268 (IXFT) Case Style  
ID25  
IDM  
IAR  
T
= 25°C  
12  
48  
12  
A
A
A
C
T
= 25°C, pulse width limited by T  
= 25°C  
C
JM  
T
C
G
(TAB)  
S
EAR  
EAS  
T
= 25°C  
= 25°C  
30  
1.0  
mJ  
J
C
T
C
G = Gate,  
S = Source,  
D = Drain,  
TAB = Drain  
dv/dt  
I
T
I , di/dt 100 A/µs, V V  
5
V/ns  
S
DM  
DD  
DSS  
150°C, R = 2 Ω  
J
G
PD  
TJ  
T
= 25°C  
300  
W
C
Features  
l
-55 ... +150  
°C  
RF capable MOSFETs  
l
Double metal process for low gate  
resistance  
Ruggedpolysilicongatecellstructure  
Unclamped Inductive Switching (UIS)  
rated  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
l
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-247  
1.13/10 Nm/lb.in.  
l
l
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Weight  
TO-247  
TO-268  
6
4
g
g
Applications  
l
DC-DC converters  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
l
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
J
min. typ. max.  
l
DC choppers  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 4mA  
1000  
3.0  
V
l
13.5 MHz industrial applications  
l
VGS(th)  
IGSS  
5.5 V  
Pulse generation  
l
Laser drivers  
V
= ±20 V, V = 0  
±100 nA  
GS  
DS  
l
RF amplifiers  
IDSS  
V
= V  
= 0 V  
50 µA  
1.5 mA  
DS  
DSS  
Advantages  
l
Space savings  
V
T
= 125°C  
GS  
J
l
RDS(on)  
V
Note 1  
= 10 V, I = 0.5 I  
1.05  
GS  
D
D25  
High power density  
98856 (8/01)  
© 2001 IXYS All rights reserved  

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