Q3-Class
VDSS = 1000V
ID25 = 15A
RDS(on) 1.05
IXFT15N100Q3
IXFH15N100Q3
HiperFETTM
Power MOSFET
D
trr
250ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
G
TO-268
(IXFT)
S
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
1000
1000
V
V
TO-247
(IXFH)
VDGR
TJ = 25C to 150C, RGS = 1M
VGSS
VGSM
Continuous
Transient
30
40
V
V
ID25
IDM
TC = 25C
15
45
A
A
G
TC = 25C, Pulse Width Limited by TJM
D
D (Tab)
S
IA
TC = 25C
TC = 25C
7.5
1.0
A
J
EAS
G = Gate
D
= Drain
S = Source
Tab = Drain
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
50
V/ns
W
690
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
Features
-55 ... +150
Low Intrinsic Gate Resistance
International Standard Packages
Low Package Inductance
Fast Intrinsic Rectifier
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in.
Low RDS(on) and QG
Weight
TO-268
TO-247
4.0
6.0
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
1000
3.5
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Applications
6.5
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
100 nA
IDSS
25 A
Power Supplies
DC Choppers
Temperature and Lighting Controls
TJ = 125C
1.5 mA
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
1.05
DS100353A(1/20)
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