Preliminary Technical Information
X3-Class HiPerFETTM
Power MOSFET
VDSS = 250V
ID25 = 150A
RDS(on) 9.0m
IXFT150N25X3HV
IXFH150N25X3
N-Channel Enhancement Mode
Avalanche Rated
TO-268HV (IXFT)
G
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25C to 150C
250
250
V
V
D (Tab)
VDGR
TJ = 25C to 150C, RGS = 1M
TO-247 (IXFH)
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
IDM
TC = 25C
150
300
A
A
TC = 25C, Pulse Width Limited by TJM
G
D
IA
TC = 25C
TC = 25C
75
A
J
S
D (Tab)
D = Drain
EAS
1.8
G = Gate
S = Source
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
V/ns
W
Tab = Drain
735
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Low RDS(ON) and QG
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in
Avalanche Rated
Weight
TO-268HV
TO-247
4
6
g
g
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
250
V
V
Applications
2.5
4.5
Switch-Mode and Resonant-Mode
100 nA
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
IDSS
25 A
1 mA
TJ = 125C
Robotics and Servo Controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
7.7
9.0 m
DS100838C(11/17)
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