Datasheet > IXFT16N120P

IXFT16N120P

更新时间： 2024-11-22 14:55:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	155K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFT16N120P 数据手册

Polar^TMHiPerFET^TM

Power MOSFETs

V_DSS= 1200V

I_D25= 16A

R_DS(on)≤ 950mΩ

≤ 300ns

IXFT16N120P

IXFH16N120P

N-Channel Enhancement Mode

Avalanche Rated

t_rr

Fast Intrinsic Diode

TO-268 (IXFT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1200

TO-247 (IXFH)

V_DGR

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

D (Tab)

I_A

T_C= 25°C

G = Gate

S = Source

= Drain

E_AS

800

Tab = Drain

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

660

Features

T_J

-55 ... +150

150

°C

^zInternational Standard Packages

^zFast Recovery Diode

T_JM

T_stg

-55 ... +150

^zAvalanche Rated

T_L

T_sold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

^zLow Package Inductance

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in.

Advantages

Weight

TO-268

TO-247

Easy to Mount

Space Savings

High Power Density

Applications

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

1200

3.5

Typ.

Max.

^zHigh Voltage Switch-mode and

Resonant-Mode Power Supplies

^zHigh Voltage Pulse Power Applications

^zHigh Voltage Discharge Circuits in

Lasers Pulsers, Spark Igniters, RF

Generators

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

6.5

±200 nA

^zHigh Voltage DC-DC converters

^zHigh Voltage DC-AC inverters

I_DSS

25 μA

2.5 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

950 mΩ

DS99896B(10/12)

12 3 4 5 6

中文翻译

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