Datasheet > IXFT20N60Q

IXFT20N60Q

更新时间： 2022-11-11 00:16:41

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	149K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

获取价格

数据手册
替代型号

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IXFT20N60Q 数据手册

HiPerFET^TM

PowerMOSFETs

Q-Class

IXFH 20N60Q

IXFT 20N60Q

V_DSS

I_D25

= 600 V

20 A

R_DS(on)= 0.35 Ω

t_rr≤ 250ns

N-ChannelEnhancementMode

Avalanche Rated, High dv/dt,

Low Gate Charge and Capacitances

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

600

V_GS

V_GSM

Continuous

Transient

±30

±40

(TAB)

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

TO-268 (IXFT) Case Style

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

(TAB)

P_D

T_C= 25°C

300

G = Gate

D = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

S = Source

TAB = Drain

Features

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

^zIXYS advanced low gate charge

process

^zInternational standard packages

^zLow gate charge and capacitance

- easier to drive

M_d

1.13/10 Nm/lb.in.

Weight

TO-247AD

TO-268

- faster switching

^zLow R_{DS (on)}

Symbol

TestConditions

Characteristic Values

^zUnclamped Inductive Switching (UIS)

rated

^zMolding epoxies meet UL 94 V-0

flammability classification

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= ±30 V_DC, V_DS= 0

600

2.0

4.5

±100

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

µA

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.35

Ω

High power density

DS98549C(03/03)

12 3 4

中文翻译

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IXFT20N60Q 替代型号

型号	品牌	替代类型	描述	数据表
APT6035SVRG	MICROSEMI	功能相似	Power Field-Effect Transistor, 18A I(D), 600V, 0.35ohm, 1-Element, N-Channel, Silicon, Met
APT6029SFLLG	MICROSEMI	功能相似	暂无描述

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