Datasheet > IXFT15N100

IXFT15N100

更新时间： 2024-09-21 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
5页	707K
描述
功能与特色: 应用: 优点:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFT15N100 数据手册

HiPerFET^TM

Power MOSFETs

V_DSS

I_D25

R_DS(on)

IXFH/IXFT/IXFX14N100 1000 V

IXFH/IXFT/IXFX15N100 1000 V

14 A 0.75 W

15 A 0.70 W

t_rr£ 200 ns

N-Channel Enhancement Mode

High dv/dt, Low t_rr, HDMOS^TMFamily

Preliminarydatasheet

TO-247 AD

(IXFH)

Symbol

TestConditions

MaximumRatings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MW

1000

(TAB)

V_GS

V_GSM

Continuous

Transient

±20

±30

PLUS247^TM

(IXFX)

I_D25

I_DM

I_AR

T_C= 25°C

14N100

15N100

14N100

15N100

14N100

15N100

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

(TAB)

E_AR

T_C= 25°C

TO-268 (D3)

(IXFT)

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

P_D

T_J

T_C= 25°C

360

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

Features

^●Internationalstandardpackages

^●Low R_{DS (on)}HDMOS^TMprocess

T_L

1.6 mm (0.062 in.) from case for 10 s

Mountingtorque

300

°C

^●Rugged polysilicon gate cell structure

^●UnclampedInductiveSwitching(UIS)

rated

^●Low package inductance

- easy to drive and to protect

^●Fast intrinsic Rectifier

M_d

1.13/10 Nm/lb.in.

Weight

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

Applications

●

DC-DC converters

Battery chargers

Switched-modeandresonant-mode

●

min. typ. max.

●

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 4 mA

1000

2.5

powersupplies

DC choppers

^●AC motor control

●

V_GS(th)

4.5

●

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

250 mA

Temperatureandlightingcontrols

V_DS= 0.8 • V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

●

Easy to mount with 1 screw (TO-247)

(isolated mounting screw hole) or

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

14N100

15N100

0.75

0.70

mounting clip or spring (PLUS 247^TM)

●

Highpowersurfacemountablepackage

High power density

Pulse test, t £ 300 ms, duty cycle d £ 2 %

●

IXYS reserves the right to change limits, test conditions, and dimensions.

97535B(1/99)

1 - 4

12 3 4 5

中文翻译

下载PDF

与IXFT15N100相关器件

型号	品牌	获取价格	描述	数据表
IXFT15N100Q	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class
IXFT15N100Q3	IXYS	获取价格	HiperFETTM Power MOSFETs Q3-Class
IXFT15N100Q3	LITTELFUSE	获取价格	Q3级系列功率MOSFET为最终用户提供具有一流功率开关性能、出色热特性、强大器件耐用性和
IXFT15N100Q3-TRL	IXYS	获取价格	Power Field-Effect Transistor,
IXFT15N80Q	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class
IXFT15N80Q	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFT16N120P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFT16N120P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFT16N120PHV	IXYS	获取价格	Power Field-Effect Transistor
IXFT16N120PHV	LITTELFUSE	获取价格	功能与特色: 优点: 应用: