HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH/IXFT/IXFX14N100 1000 V
IXFH/IXFT/IXFX15N100 1000 V
14 A 0.75 W
15 A 0.70 W
trr £ 200 ns
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
Preliminarydatasheet
TO-247 AD
(IXFH)
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
1000
1000
V
V
(TAB)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
PLUS247TM
(IXFX)
ID25
IDM
IAR
TC = 25°C
14N100
15N100
14N100
15N100
14N100
15N100
14
15
56
60
14
15
A
A
A
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
(TAB)
(TAB)
G
D
EAR
TC = 25°C
45
5
mJ
TO-268 (D3)
(IXFT)
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
PD
TJ
TC = 25°C
360
W
G
S
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
● Internationalstandardpackages
● Low RDS (on) HDMOSTM process
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
● Rugged polysilicon gate cell structure
● UnclampedInductiveSwitching(UIS)
rated
● Low package inductance
- easy to drive and to protect
● Fast intrinsic Rectifier
Md
1.13/10 Nm/lb.in.
Weight
6
g
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Applications
●
DC-DC converters
Battery chargers
Switched-modeandresonant-mode
●
min. typ. max.
●
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 4 mA
1000
2.5
V
V
powersupplies
DC choppers
● AC motor control
●
VGS(th)
4.5
●
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
250 mA
Temperatureandlightingcontrols
VDS = 0.8 • VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
Advantages
●
1
mA
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole) or
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
14N100
15N100
0.75
0.70
W
W
mounting clip or spring (PLUS 247TM)
●
Highpowersurfacemountablepackage
High power density
Pulse test, t £ 300 ms, duty cycle d £ 2 %
●
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
97535B(1/99)
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