Datasheet > IXFN32N100P

IXFN32N100P

更新时间： 2024-11-18 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	108K
描述
Polar Power MOSFET HiPerFET

阅读下载

中文翻译

获取价格

数据手册

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IXFN32N100P 数据手册

Polar^TMPower MOSFET

HiPerFET^TM

V_DSS= 1000V

I_D25= 27A

R_DS(on)≤ 320mΩ

≤ 300ns

IXFN32N100P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

t_rr

miniBLOC, SOT-227 B (IXFN)

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1000

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

± 30

± 40

I_D25

I_DM

T_C= 25°C

D = Drain

T_C= 25°C, pulse width limited by T_JM

G = Gate

S = Source

I_AR

T_C= 25°C

E_AS

1.5

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

690

Features

T_J

-55 ... +150

150

°C

^zInternational standard package

^zEncapsulating epoxy meets

UL94V-0, flammability classification

^zminiBLOC with Aluminium nitride

isolation

T_JM

T_stg

-55 ... +150

T_L

1.6mm (0.062 in.) from case for 10s

300

°C

^zFast recovery diode

V_ISOL

50/60 Hz, RMS

t = 1min

2500

3000

^zUnclamped Inductive Switching (UIS)

rated

I_ISOL≤ 1mA

t = 1s

^zLow package inductance

- easy to drive and to protect

M_d

Mounting torque

Terminal connection torque

1.5/13

1.3/11.5

Nm/lb.in.

Weight

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 30V, V_DS= 0V

1000

3.5

Applications

6.5

^zSwitched-mode and resonant-mode

power supplies

± 200 nA

^zDC-DC Converters

^zLaser Drivers

I_DSS

V_DS= V_DSS

V_GS= 0V

50 μA

2.5 mA

T_J= 125°C

^zAC and DC motor controls

^zRobotics and servo controls

R_DS(on)

V_GS= 10V, I_D= 16A, Note 1

320 mΩ

DS99880A(4/08)

12 3 4

中文翻译

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