Datasheet > IXFN36N60

IXFN36N60

更新时间： 2024-11-19 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	893K
描述
功能与特色: 应用: 优点:

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中文翻译

获取价格

数据手册

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IXFN36N60 数据手册

IXFK 32N60 IXFN 32N60

IXFK 36N60 IXFN 36N60

Preliminary Data

V_DSSI_D25R_DS(on)

t_rr

IXFK/FN 36N60 600V 36A 0.18Ω 250ns

IXFK/FN 32N60 600V 32A 0.25Ω 250ns

HiPerFET^TMPower MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

TO-264 AA (IXFK)

Symbol

TestConditions

Maximum Ratings

IXFK IXFN

V_DSS

V_DGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GS= 1 MΩ

D (TAB)

V_GS

Continuous

Transient

±20

±30

±20

±30

V_GSM

miniBLOC, SOT-227 B (IXFN)

E153432

I_D25

I_DM

T_C= 25°C, Chip capability

32N60 32

36N60 36

128

144

T_C= 25°C, pulse width limited by T_JM32N60 128

36N60 144

I_AR

T_C= 25°C

E_AR

dv/dt

G = Gate

S = Source

D = Drain

TAB = Drain

Either Source terminal at miniBLOC

can be used as Main or Kelvin Source

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_C= 25°C

500

520

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

• International standard packages

• JEDEC TO-264 AA, epoxy meet

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

-55 ... +150

T_L

1.6 mm (0.063 in) from case for 10 s

50/60 Hz, RMSt = 1 min

300

°C

V_ISOL

2500

3000

I_ISOL≤ 1 mAt = 1 s

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

M_d

Mounting torque

Terminal connection torque

0.9/6 1.5/13 Nm/lb.in.

- 1.5/13 Nm/lb.in.

Weight

• Low package inductance

• Fast intrinsic Rectifier

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 8 mA

600

V_GH(th)

4.5

• Temperature and lighting controls

• Low voltage relays

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

V_DS= 0.8 V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

400 µA

Advantages

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 32N60

36N60

0.18

0.25

Ω

92807G(01/96)

IXYSCorporation

IXYSSemiconductor

3540 Bassett Street, Santa Clara,CA 95054

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: 408-982-0700

Fax: 408-496-0670

Tel: +49-6206-5030

Fax: +49-6206-503629

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中文翻译

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与IXFN36N60相关器件

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IXFN38N100P	IXYS	获取价格	Polar Power MOSFET HiPerFET
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IXFN38N80Q2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
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