Datasheet > IXFN32N120

IXFN32N120

更新时间： 2024-09-18 14:56:59

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力特 - LITTELFUSE		/
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中文翻译

获取价格

数据手册

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IXFN32N120 数据手册

Advanced Technical Data

HiPerFET^TM

Power MOSFETs

IXFN 32N120

V_DSS= 1200V

I_D2532A

R_DS(on)= 0.35Ω

N-Channel Enhancement Mode

AvalancheRated, Highdv/dt, Lowt_rr

Symbol

TestConditions

Maximum Ratings

miniBLOC,SOT-227B(IXFN)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

1200

V_GS

Continuous

Transient

V_GSM

I_D25

T_C= 25°C, Chip capability

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

128

G = Gate

D = Drain

E_AR

T_C= 25°C

S = Source

TAB = Drain

E_AS

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

P_D

T_C= 25°C

780

• International standard package

T_J

-55 ... +150

150

-55 ... +150

°C

• miniBLOC, with Aluminium nitride

isolation

• Low R_{DS (on)}HDMOS^TMprocess

T_JM

T_stg

• Rugged polysilicon gate cell

structure

• Unclamped Inductive Switching (UIS)

rated

• Low package inductance

• Fast intrinsic Rectifier

V_ISOL

M_d

50/60 Hz, RMS

_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

Mounting torque

Terminal connection torque

1.5/13 Nm/lb.in.

Weight

Applications

Symbol

TestConditions

Characteristic Values

•

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

1200

2.5

V_GS(th)

5.0

•

DC choppers

Temperature and lighting controls

I_GSS

I_DSS

V_GS(th)= 30 V_DC, V_DS= 0

200 nA

V_DS= V_DSS

V_GS= 0 V

T = 25°C

T_J^J= 125°C

50 µA

Advantages

R_DS(on)

= 10 V, I_D= 0.5 • I

0.35

Ω

Pu^GSlse test, t ≤ 300 µs,^D25

duty cycle d ≤ 2 %

•

Easy to mount

Space savings

High power density

DS98968B(10/03)

12 3 4 5

中文翻译

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