Datasheet > IXFN360N10T

IXFN360N10T

更新时间： 2024-04-09 18:40:59

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网栅开关脉冲晶体管
页数	文件大小	规格书
7页	202K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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数据手册

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IXFN360N10T 数据手册

GigaMOS^TMTrench

HiperFET^TM

Power MOSFET

V_DSS= 100V

I_D25= 360A

R_DS(on)≤ 2.6mΩ

IXFN360N10T

t_rr

≤ 130ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

miniBLOC, SOT-227

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

100

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

T_C= 25°C (Chip Capability)

360

I_LRMS

I_DM

Lead Current Limit, RMS

T_C= 25°C, Pulse Width Limited by T_JM

200

900

G = Gate

S = Source

D = Drain

I_A

T_C= 25°C

100

E_AS

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

( Gate Return ) Terminal.

P_D

T_C= 25°C

830

dV/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

V/ns

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

^zInternational Standard Package

^z175°C Operating Temperature

^zHigh Current Handling Capability

^zAvalanche Rated

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

V_ISOL

50/60 Hz, RMS

I_ISOL≤ 1mA

t = 1 Minute

t = 1 Second

2500

3000

^zFast Intrinsic Rectifier

Low R_DS(on)

M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

Advantages

Weight

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25°C, Unless Otherwise Specified)

Min.

100

2.5

Typ . Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 3mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

^zDC-DC Converters

^zBattery Chargers

4.5

^zSwitch-Mode and Resonant-Mode

Power Supplies

±200 nA

^zDC Choppers

^zAC Motor Drives

I_DSS

25 μA

2.5 mA

T_J= 150°C

^zUninterruptible Power Supplies

^zHigh Speed Power Switching

Applications

R_DS(on)

V_GS= 10V, I_D= 100A, Note 1

2.6 mΩ

DS100088A(10/09)

12 3 4 5 6 7

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