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IXFN360N15T2 PDF预览

IXFN360N15T2

更新时间: 2024-11-18 11:14:03
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
6页 177K
描述
GigaMOSTrenchT2 HiperFET Power MOSFET

IXFN360N15T2 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-PUFM-X4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:4.44
Is Samacsys:N其他特性:UL RECOGNIZED, AVALANCHE RATED
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (Abs) (ID):310 A
最大漏极电流 (ID):310 A最大漏源导通电阻:0.004 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1070 W
最大脉冲漏极电流 (IDM):900 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFN360N15T2 数据手册

 浏览型号IXFN360N15T2的Datasheet PDF文件第2页浏览型号IXFN360N15T2的Datasheet PDF文件第3页浏览型号IXFN360N15T2的Datasheet PDF文件第4页浏览型号IXFN360N15T2的Datasheet PDF文件第5页浏览型号IXFN360N15T2的Datasheet PDF文件第6页 
Advance Technical Information  
GigaMOSTM TrenchT2  
HiperFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 310A  
RDS(on) 4.0mΩ  
IXFN360N15T2  
trr  
150ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC, SOT-227  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D
ID25  
TC = 25°C (Chip Capability)  
310  
A
G = Gate  
D = Drain  
S = Source  
IL(RMS)  
IDM  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
200  
900  
A
A
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
( Gate Return ) Terminal.  
IA  
TC = 25°C  
TC = 25°C  
100  
A
J
EAS  
TBD  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 175°C  
TC = 25°C  
20  
V/ns  
W
Features  
1070  
International Standard Package  
miniBLOC, with Aluminium Nitride  
Isolation  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Isolation voltage 2500 V~  
High Current Handling Capability  
Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
VISOL  
50/60 Hz, RMS  
t = 1 minute  
t = 1 second  
2500  
3000  
V~  
V~  
Avalanche Rated  
IISOL 1mA  
Low RDS(on)  
Md  
Mounting Torque  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Advantages  
Weight  
30  
g
Easy to Mount  
Space Savings  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
150  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Synchronous Recification  
DC-DC Converters  
Battery Chargers  
5.0  
Switched-Mode and Resonant-Mode  
Power Supplies  
±200 nA  
IDSS  
50 μA  
5 mA  
DC Choppers  
TJ = 150°C  
AC Motor Drives  
Uninterruptible Power Supplies  
High Speed Power Switching  
Applications  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
4.0 mΩ  
DS100180(08/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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