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IXFN38N100Q2_08 PDF预览

IXFN38N100Q2_08

更新时间: 2024-11-05 11:14:03
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页数 文件大小 规格书
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描述
HiPerFET Power MOSFET

IXFN38N100Q2_08 数据手册

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HiPerFETTM  
Power MOSFET  
IXFN38N100Q2  
VDSS  
ID25  
= 1000V  
= 38A  
RDS(on) 250mΩ  
trr 300ns  
N-Channel Enhancement Mode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
miniBLOC, SOT-227 B (IXFN)  
E153432  
S
Symbol  
TestConditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
1000  
1000  
V
V
S
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
D
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
38  
152  
38  
A
A
A
G = Gate  
S = Source  
D = Drain  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
5
mJ  
J
dv/dt  
IS IDM, VDD VDSS , TJ 150°C  
20  
V/ns  
Features  
Double metal process for low  
gate resistance  
PD  
TJ  
TC = 25°C  
890  
W
-55 ... +150  
°C  
miniBLOC, with Aluminium nitride  
isolation  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
Unclamped Inductive Switching (UIS)  
rated  
VISOL  
Md  
50/60 Hz, RMS, t = 1 minute  
2500  
V
Low package inductance  
Fast intrinsic Rectifier  
Mounting torque  
Terminalconnectiontorque  
1.5/13 Nm/lb.in.  
1.5/11.5 Nm/lb.in.  
Applications  
Weight  
Symbol  
30  
g
DC-DC converters  
Switched-mode and resonant-mode  
power supplies  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
DC choppers  
Pulse generators  
VDSS  
VGS = 0V, ID = 1mA  
1000  
3.0  
V
V
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
VGS = ±30V, VDS = 0V  
5.5  
Advantages  
Easy to mount  
Space savings  
High power density  
±200 nA  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
3 mA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
250 mΩ  
DS99027B(05/08)  
© 2008 IXYS All rights reserved  

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