Datasheet > IXFN38N100Q2_08

IXFN38N100Q2_08

更新时间： 2022-11-10 23:51:24

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	135K
描述
HiPerFET Power MOSFET

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数据手册

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IXFN38N100Q2_08 数据手册

HiPerFET^TM

Power MOSFET

IXFN38N100Q2

V_DSS

I_D25

= 1000V

= 38A

R_DS(on)≤ 250mΩ

t_rr≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, Low Intrinsic R_g

High dV/dt, Low t_rr

miniBLOC, SOT-227 B (IXFN)

E153432

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1 MΩ

1000

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

152

G = Gate

S = Source

D = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

E_AR

E_AS

T_C= 25°C

dv/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

V/ns

Features

•Double metal process for low

gate resistance

P_D

T_J

T_C= 25°C

890

-55 ... +150

°C

•miniBLOC, with Aluminium nitride

isolation

T_JM

T_stg

150

-55 ... +150

°C

•Unclamped Inductive Switching (UIS)

rated

V_ISOL

M_d

50/60 Hz, RMS, t = 1 minute

2500

•Low package inductance

•Fast intrinsic Rectifier

Mounting torque

Terminalconnectiontorque

1.5/13 Nm/lb.in.

1.5/11.5 Nm/lb.in.

Applications

Weight

Symbol

•DC-DC converters

•Switched-mode and resonant-mode

power supplies

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

•DC choppers

•Pulse generators

V_DSS

V_GS= 0V, I_D= 1mA

1000

3.0

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 8mA

V_GS= ±30V, V_DS= 0V

5.5

Advantages

•Easy to mount

•Space savings

•High power density

±200 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

50 μA

3 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

250 mΩ

DS99027B(05/08)

12 3 4

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