Datasheet > IXFN39N90V

IXFN39N90V

更新时间： 2024-02-29 18:10:56

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	208K
描述
Power Field-Effect Transistor,

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技术参数
数据手册

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IXFN39N90V 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.46

IXFN39N90V 数据手册

HiPerFET^TM

Power MOSFET

V_DSS= 900V

I_D25= 39A

IXFN39N90

R_DS(on)≤ 220mΩ

Single MOSFET Die

t_rr

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated

miniBLOC, SOT-227

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

900

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

154

I_A

E_AS

T_C= 25°C

G = Gate

S = Source

D = Drain

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

Either Source Terminal at miniBLOC

can be used as Main or Kelvin Source.

694

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

V_ISOL

50/60 Hz, RMS

I_ISOL≤ 1mA

t = 1 minute

t = 1 second

2500

3000

^zInternational Standard Package

^zminiBLOC, with Aluminium Nitride

Isolation

M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

^zHigh Current Handling Capability

^zFast Intrinsic Diode

Weight

^zAvalanche Rated

^zLow Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_DSS

V_GS= 0V, I_D= 3mA

900

BV_DSS

Temperature Dependence

3.68

V/K

Applications

V_GS(th)

V_DS= V_GS, I_D= 8mA

Temperature Dependence

3.0

5.5

V/K

^zDC-DC Converters

^zBattery Chargers

-0.009

^zSwitch-Mode and Resonant-Mode

Power Supplies

I_GSS

I_DSS

V_GS= ±20V, V_DS= 0V

±200 nA

V_DS= V_DSS, V_GS= 0V

100 μA

2 mA

^zDC Choppers

T_J= 125°C

^zTemperture and Lighting Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

220 mΩ

DS98628C(6/13)

12 3 4 5

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