Datasheet > IXFN44N50Q_03

IXFN44N50Q_03

更新时间： 2022-11-10 23:52:38

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	568K
描述
HiPerFET Power MOSFETs Q-Class

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数据手册

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IXFN44N50Q_03 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

V_DSSI_D25

R_DS(on)

IXFN 44N50Q

IXFN 48N50Q

500 V 44 A 120 mΩ

500 V 48 A 100 mΩ

t_rr≤ 250 ns

N-ChannelEnhancementMode

Avalanche Rated, Low Q_g, High dv/dt

miniBLOC,SOT-227B(IXFN)

E153432

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

500

V_GS

V_GSM

Continuous

Transient

I_D25

I_DM

I_AR

T_C= 25°C

44N50

48N50

G = Gate

D =^DDrain

S = Source

T_C= 25°C, pulse width limited by T_JM44N50

176

48N50

192

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

T_C= 25°C

Features

E_AR

E_AS

• IXYS advanced low Q_gprocess

2.5

• Low gate charge and capacitances

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

- easier to drive

-faster switching

• Unclamped Inductive Switching (UIS)

P_D

T_C= 25°C

500

rated

T_J

-55 to +150

150

-55 to +150

°C

• Low R_{DS (on)}

T_JM

T_stg

V_ISOL

• Fast intrinsic diode

• International standard package

• miniBLOC with Aluminium nitride

isolation for low thermal resistance

• Low terminal inductance (<10 nH) and

stray capacitance to heatsink (<35pf)

• Molding epoxies meet UL 94 V-0

flammability classification

50/60 Hz, RMS

_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

M_d

Mounting torque

Terminal connection torque

1.5/13

Nm/lb.in.

Weight

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

• DC-DC converters

• Battery chargers

min.

typ.

max.

• Switched-mode and resonant-mode

V_DSS

V_GS(th)

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 4 mA

500

2.0

power supplies

4.0

• DC choppers

• Temperature and lighting controls

I_GSS

I_DSS

V_GS= 20 V_DC, V_DS= 0

100

V_DS= V

= 25°C

100

µA

V_GS= 0^DV^SS

T_J^J= 125°C

Advantages

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

44N50

48N50

120

100

Ω

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS98715B(08/03)

12 3 4

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