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IXFN48N50U3 PDF预览

IXFN48N50U3

更新时间: 2024-11-20 22:45:23
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 154K
描述
HiPerFET Power MOSFETs

IXFN48N50U3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:MINIBLOC-4
针数:4Reach Compliance Code:compliant
风险等级:5.67Is Samacsys:N
其他特性:AVALANCHE RATED外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):48 A最大漏极电流 (ID):48 A
最大漏源导通电阻:0.08 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):520 W最大脉冲漏极电流 (IDM):192 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:35晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFN48N50U3 数据手册

 浏览型号IXFN48N50U3的Datasheet PDF文件第2页浏览型号IXFN48N50U3的Datasheet PDF文件第3页浏览型号IXFN48N50U3的Datasheet PDF文件第4页浏览型号IXFN48N50U3的Datasheet PDF文件第5页 
HiPerFETTM  
VDSS  
ID (cont)  
RDS(on)  
trr  
500 V  
44 A  
48 A  
0.12 W 35 ns  
0.10 W 35 ns  
IXFN44N50U2 IXFN44N50U3  
Power MOSFETs  
IXFN48N50U2 IXFN48N50U3 500 V  
3
3
Buck & Boost Configurations for  
PFC & Motor Control Circuits  
4
2
2
Preliminary data  
4
1
1
miniBLOC, SOT-227 B  
Symbol  
TestConditions  
MaximumRatings  
1
VDSS  
VDGR  
TJ = 25°C to 150°C  
500  
500  
V
2
TJ = 25°C to 150°C; RGS = 1 MW  
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
4
ID25  
IDM  
TC = 25°C  
44N50  
48N50  
44  
48  
A
A
3
TC = 25°C,  
pulse width limited by max. TJM  
44N50  
48N50  
176  
192  
A
A
Features  
· Popular Buck & Boost circuit  
topologies  
· Internationalstandardpackage  
miniBLOCSOT-227B  
· Aluminium nitrideisolation  
- highpowerdissipation  
· Isolation voltage 3000 V~  
· Low RDS (on) HDMOSTM process  
· Rugged polysilicon gate cell structure  
· Low drain-to-case capacitance  
(<60 pF)  
IAR  
TC = 25°C  
24  
30  
5
A
EAR  
Repetitive  
mJ  
dv/dt  
IS £ I , -di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ D1M50°C, RG = 2 W  
,
V/ns  
PD  
TC = 25°C  
520  
600  
60  
W
V
VRRM  
IFAVM  
IFRM  
PD  
TC = 70°C; rectangular, d = 0.5  
tp <10 ms; pulse width limited by TJ  
TC = 25°C  
A
- reduced RFI  
· Ultra-fast FRED diode with soft  
reverse recovery  
800  
180  
A
W
Applications  
· Power factor controls and buck  
regulators  
· DC servo and robotic drives  
· DC choppers  
TJ  
TJM  
Tstg  
-40 ... +150  
150  
-40 ... +150  
°C  
°C  
°C  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
· Switch reluctance motor controls  
Md  
Mountingtorque  
Terminalconnectiontorque(M4)  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Advantages  
· Easy to mount with 2 screws  
· Space savings  
Weight  
30  
g
· Tightly coupled FRED  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
96535B(7/00)  
1 - 5  

IXFN48N50U3 替代型号

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