Datasheet > IXFN55N50

IXFN55N50

更新时间： 2024-11-19 14:56:23

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力特 - LITTELFUSE		局域网开关脉冲晶体管
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5页	654K
描述
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中文翻译

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数据手册

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IXFN55N50 数据手册

HiPerFET^TM

V_DSS

I_D25

= 500 V

= 55 A

IXFK 55N50

IXFX 55N50

IXFN 55N50

Power MOSFET

R_DS(on)= 90mΩ

t_rr

≤ 250 ns

Single Die MOSFET

Symbol

TestConditions

Maximum Ratings

PLUS247(IXFX)

V_DSS

V_DGR

= 25°C to 150°C

500

T^J_J= 25°C to 150°C

V_GSS

V_GSM

Continuous

Transient

(TAB)

I_D25

I_DM

= 25°C

220

T^C_C= 25°C, pulse width limited by T_JM

TO-264AA(IXFK)

I_AR

E_AR

= 25°C

T^C_C= 25°C

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

D (TAB)

T_C= 25°C

625

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

miniBLOC,SOT-227B(IXFN)

E153432

T_L

1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX)

300

°C

M_d

Mounting torque

Terminal leads

(IXFK,IXFX)

(IXFN)

1.13/10 Nm/lb.in.

V_ISOL

50/60 Hz, RMS

(IXFN)

t = 1minute

t = 1 s

2500

3000

I_ISOL≤ 1 mA

G = Gate

= Drain

Weight

PLUS247

TO-264

SOT-227B

S = Source

TAB = Drain

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

• International standard packages

• Encapsulating epoxy meets

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 8 mA

V_GS= 20 V_DC, V_DS= 0

500

• Low R

HDMOS^TMprocess

• Rugge^Dd^{S (}p^ono⁾lysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

2.5

4.5

200

• Low package inductance

• Fast intrinsic Rectifier

I_DSS

V_DS= V_DSS

V_GS= 0 V

µA

T_J= 125°C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

90 mΩ

Advantages

• PLUS247 package for clip or spring

bar mounting

• Easy to mount

• Space savings

• High power density

DS97502G(11/04)

12 3 4 5

中文翻译

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