Datasheet > IXFN56N90P_11

IXFN56N90P_11

更新时间： 2024-11-04 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	114K
描述
Polar HiPerFET Power MOSFET

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中文翻译

获取价格

数据手册

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IXFN56N90P_11 数据手册

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 900V

I_D25= 56A

IXFN56N90P

R_DS(on)≤ 145mΩ

N-Channel Enhancement Mode

Avalanche Rated

t_rr

≤ 300ns

Fast Intrinsic Diode

miniBLOC

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

900

V_DGR

V_GSS

V_GSM

T_J= 25°C to 150°C, R_GS= 1MΩ

Continuous

900

± 30

± 40

Transient

I_D25

I_DM

T_C= 25°C

G = Gate

S = Source

D = Drain

T_C= 25°C, Pulse Width Limited by T_JM

168

I_A

T_C= 25°C

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

E_AS

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

1000

V/ns

Features

T_J

-55 ... +150

150

°C

T_JM

T_stg

T_L

°C

International Standard Package

miniBLOC, with Aluminium Nitride

-55 ... +150

300

°C

Isolation

Low R_DS(on)and Q_G

Avalanche Rated

Low Package Inductance

1.6mm (0.062 in.) from case for 10s

50/60 Hz, RMS

°C

V_ISOL

t = 1min

2500

3000

Fast Intrinsic Rectifier

I_ISOL≤ 1mA

t = 1s

M_d

Mounting Torque

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

Advantages

High Power Density

Easy to Mount

Space Savings

Weight

Applications

Symbol

Test Conditions

Characteristic Values

Switch-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 8mA

V_DS= V_GS, I_D= 3mA

V_GS= ± 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

900

3.5

6.5

± 200 nA

I_DSS

50 μA

T_J= 125°C

5 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

145 mΩ

DS100066A(02/11)

12 3 4

中文翻译

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