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IXFN48N55 PDF预览

IXFN48N55

更新时间: 2024-11-21 11:14:03
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 77K
描述
HiPerFET Power MOSFETs Single Die MOSFET

IXFN48N55 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X4针数:4
Reach Compliance Code:unknown风险等级:5.68
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:550 V最大漏极电流 (Abs) (ID):48 A
最大漏极电流 (ID):48 A最大漏源导通电阻:0.11 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):600 W
最大脉冲漏极电流 (IDM):192 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFN48N55 数据手册

 浏览型号IXFN48N55的Datasheet PDF文件第2页 
Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
Single Die MOSFET  
IXFN 48N55  
VDSS = 550 V  
ID25 48 A  
RDS(on) = 110 mW  
=
D
trr £ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
G
S
S
Symbol  
TestConditions  
MaximumRatings  
miniBLOC, SOT-227 B  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
550  
550  
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW  
G
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
S
ID25  
TC = 25°C  
48  
A
D
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
192  
44  
A
A
G = Gate  
S = Source  
D = Drain  
EAR  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
EAS  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
,
5
V/ns  
TJ £ 150°C, RG = 2 W  
Features  
PD  
TC = 25°C  
600  
W
Internationalstandardpackage  
miniBLOC, withAluminiumnitride  
isolation  
Low RDS (on) HDMOSTM process  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Rugged polysilicon gate cell structure  
TJ  
1.6 mm (0.63 in) from case for 10 s  
-
°C  
Unclamped Inductive Switching (UIS)  
rated  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Low package inductance  
Fast intrinsic Rectifier  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Applications  
DC-DC converters  
Battery chargers  
Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
550  
2.5  
V
V
DC choppers  
Temperatureandlightingcontrols  
VGH(th)  
4.5  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
100 mA  
Advantages  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
110 mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98711(03/24/00)  
1 - 2  

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