Datasheet > IXFN50N120SIC

IXFN50N120SIC

更新时间： 2024-09-15 21:11:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	467K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXFN50N120SIC 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.71	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IXFN50N120SIC 数据手册

IXFN50N120SiC

preliminary

I_D25

V_DSS

47 A

SiC Power MOSFET

= 1200 V

R_{DS(on) max}= 50 mΩ

Part number

IXFN50N120SiC

Backside: isolated

UL pending

D (3)

(2)

S (1, 4)

Features / Advantages:

Applications:

Package: SOT-227B (minibloc)

• High speed switching

with low capacitances

• High blocking voltage

with low R_DS(on)

• Easy to parallel and simple to drive

• Avalanche ruggedness

• Resistant to latch-up

• Solar inverters

• High voltage DC/DC converters

• Motor drives

• Switch mode power supplies

• UPS

• Battery chargers

• Induction heating

• Isolation Voltage: 3000 V~

• Industry standard outline

• RoHS compliant

• Epoxy meets UL 94V-0

• BaseplatewithAluminiumnitride

isolation

• Advanced power cycling

Terms & Conditions of usage

The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of

the product data with respect to his application. The speciﬁcations of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly

notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the speciﬁc application of your product, please contact your local sales

ofﬁce.

Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales ofﬁce.

Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend

- to perform joint risk and quality assessments;

- the conclusion of quality agreements;

- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

IXYS reserves the right to change limits, test conditions and dimensions.

20180223b

1 - 7

12 3 4 5 6 7

中文翻译

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与IXFN50N120SIC相关器件

型号	品牌	获取价格	描述	数据表
IXFN50N120SK	IXYS	获取价格	Power Field-Effect Transistor
IXFN50N120SK	LITTELFUSE	获取价格	工业级单开关SiC MOSFET采用带有4个连接器的UL认证SOT227B封装，提供300
IXFN50N25	IXYS	获取价格	HIPERFET Power MOSFTETs
IXFN50N25	LITTELFUSE	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXFN50N50	IXYS	获取价格	HiPerFET Power MOSFET
IXFN50N80Q2	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class
IXFN50N80Q2	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFN520N075T2	IXYS	获取价格	TrenchT2 GigaMOS HiperFET Power MOSFET
IXFN520N075T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXFN52N100X	LITTELFUSE	获取价格	Power Field-Effect Transistor,

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