Datasheet > IXFN50N120SK

IXFN50N120SK

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		开关连接器
页数	文件大小	规格书
7页	605K
描述
工业级单开关SiC MOSFET采用带有4个连接器的UL认证SOT227B封装，提供3000V隔离电压 (1s)。这些MOSFET具有开尔文连接引脚，并表现出良好的功率循环特性，以及超快速、低损

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXFN50N120SK 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.33
Base Number Matches：	1

IXFN50N120SK 数据手册

IXFN50N120SK

I_D25

V_DSS

R_{DS(on) max}

48 A

= 1200 V

50 mΩ

SiC Power MOSFET

Kelvin Source gate connection

Part number

IXFN50N120SK

Backside: isolated

E72873

D (3)

G (2)

KS (1)

S (4)

Features / Advantages:

Applications:

• Solar inverters

• High voltage DC/DC converters

• Motor drives

• Switch mode power supplies

• UPS

• Battery chargers

Package: SOT-227B (minibloc)

• High speed switching

with low capacitances

• High blocking voltage with low R_DS(on)

• Easy to parallel and simple to drive

• Resistant to latch-up

• Isolation Voltage: 2500 V~

• Industry standard outline

• RoHS compliant

• Epoxy meets UL 94V-0

• BaseplatewithAluminiumnitride

insolation

• Real Kelvin source connection

• Induction heating

• Advanced power cycling

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, test conditions and dimensions.

20221013d

1 - 7

12 3 4 5 6 7

中文翻译

下载PDF

与IXFN50N120SK相关器件

型号	品牌	获取价格	描述	数据表
IXFN50N25	IXYS	获取价格	HIPERFET Power MOSFTETs
IXFN50N25	LITTELFUSE	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXFN50N50	IXYS	获取价格	HiPerFET Power MOSFET
IXFN50N80Q2	IXYS	获取价格	HiPerFET Power MOSFETs Q-Class
IXFN50N80Q2	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFN520N075T2	IXYS	获取价格	TrenchT2 GigaMOS HiperFET Power MOSFET
IXFN520N075T2	LITTELFUSE	获取价格	这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能
IXFN52N100X	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXFN52N90P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFN52N90P	LITTELFUSE	获取价格	功能与特色: 优点: 应用: