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IXFN55N50 PDF预览

IXFN55N50

更新时间: 2024-11-17 21:54:43
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 123K
描述
HiPerFET Power MOSFET

IXFN55N50 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PUFM-X4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:8.59
Is Samacsys:N其他特性:AVALANCHE RATED
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):55 A
最大漏极电流 (ID):55 A最大漏源导通电阻:0.09 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):600 W
最大脉冲漏极电流 (IDM):220 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFN55N50 数据手册

 浏览型号IXFN55N50的Datasheet PDF文件第2页浏览型号IXFN55N50的Datasheet PDF文件第3页浏览型号IXFN55N50的Datasheet PDF文件第4页 
HiPerFETTM  
VDSS  
ID25  
RDS(on)  
trr  
IXFN 55N50 500V 55A  
IXFN 50N50 500V 50A 100m250ns  
IXFK 55N50 500V 55A 80m250ns  
80m250ns  
Power MOSFET  
Single Die MOSFET  
IXFK 50N50 500V 50A 100m250ns  
Preliminary data sheet  
TO-264AA(IXFK)  
Symbol  
TestConditions  
Maximum Ratings  
IXFK  
IXFK  
IXFN  
IXFN  
55N50  
50N50  
55N50  
50N50  
VDSS  
VDGR  
T
= 25°C to 150°C  
500  
500  
500  
500  
V
V
TJJ = 25°C to 150°C  
G
D (TAB)  
D
S
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
VGSM  
miniBLOC,SOT-227B(IXFN)  
ID25  
IDM  
IAR  
T
= 25°C  
55  
220  
55  
50  
200  
50  
55  
220  
55  
50 A  
200 A  
50 A  
TC =25°C,  
E153432  
S
TCC = 25°C  
G
EAR  
TC = 25°C  
60  
5
60  
5
mJ  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
V/ns  
S
D
PD  
TC = 25°C  
560  
600  
W
G = Gate  
D
= Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
S = Source  
TAB = Drain  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TL  
1.6 mm (0.063 in) from case for 10 s  
300 N/A  
2500  
°C  
Features  
VISOL  
50/60 Hz, RMS  
ISOL 1 mA  
t = 1 min  
t = 1 s  
N/A  
N/A  
V~  
V~  
International standard packages  
Encapsulating epoxy meets  
UL 94 V-0, flammability classification  
miniBLOC with Aluminium nitride  
isolation  
I
3000  
Md  
Mounting torque  
0.9/6  
N/A  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Terminal connection torque  
Low R  
HDMOSTM process  
Weight  
10  
30  
g
RuggeDdS (pono) lysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
Fast intrinsic Rectifier  
Symbol  
TestConditions  
CharacteristicValues  
Min. Typ. Max.  
(TJ = 25°C, unless otherwise specified)  
Applications  
DC-DC converters  
Battery chargers  
VDSS  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 8mA  
VGS = ±20V; VDS = 0V  
500  
2.5  
V
VGS(th)  
IGSS  
4.5  
V
Switched-mode and resonant-mode  
power supplies  
±200  
nA  
DC choppers  
Temperature and lighting controls  
IDSS  
V
= V  
T = 25°C  
TJJ = 125°C  
25  
2
µA  
VGDSS = 0DVSS  
mA  
Advantages  
RDS(on)  
V
= 10 V, ID = 0.5 • ID25  
55N50  
50N50  
80  
mΩ  
mΩ  
NGoSte 1  
100  
Easy to mount  
Space savings  
High power density  
97502F (04/02)  
© 2002 IXYS All rights reserved  

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