Datasheet > IXFN66N50Q2

IXFN66N50Q2

更新时间： 2024-11-06 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	121K
描述
HiPerFET Power MOSFET Q2-Class

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中文翻译

获取价格

数据手册

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IXFN66N50Q2 数据手册

HiPerFET^TM

Power MOSFET

Q2-Class

IXFN66N50Q2

V_DSS= 500V

I_D25= 66A

R_DS(on)≤ 80mΩ

t_rr

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, Low

Intrinsic R_g, High dV/dt, Low t_rr

miniBLOC, SOT-227 B (IXFN)

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

264

I_A

T_C= 25°C

G = Gate

S = Source

D = Drain

E_AS

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

735

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

Double metal process for low

gate resistance

^zminiBLOC, with Aluminium nitride

isolation

T_L

1.6mm (0.062 in.) from case for 10s

300

°C

^zUnclamped Inductive Switching (UIS)

rated

V_ISOL

50/60Hz, RMS

t = 1min

t = 1s

2500

3000

I_ISOL≤ 1mA

^zLow package inductance

^zFast intrinsic Rectifier

M_d

Mounting torque

Terminal connection torque

1.5/13

1.3/ 11.5

Nm/lb.in.

Applications

Weight

DC-DC converters

Switched-mode and resonant-mode

power supplies

DC choppers

Pulse generators

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±30V, V_DS= 0V

500

Advantages

Easy to mount

Space savings

3.0

5.5

High power density

±200

I_DSS

V_DS= V_DSS

V_GS= 0V

μA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

mΩ

DS99077B(05/08)

12 3 4 5

中文翻译

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