5秒后页面跳转
IXFN44N80P PDF预览

IXFN44N80P

更新时间: 2024-01-17 23:59:35
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 132K
描述
Power Field-Effect Transistor, 39A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

IXFN44N80P 技术参数

是否无铅:不含铅生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:4.25Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3400 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (ID):39 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
表面贴装:NO端子面层:Nickel (Ni)
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFN44N80P 数据手册

 浏览型号IXFN44N80P的Datasheet PDF文件第2页浏览型号IXFN44N80P的Datasheet PDF文件第3页浏览型号IXFN44N80P的Datasheet PDF文件第4页浏览型号IXFN44N80P的Datasheet PDF文件第5页 
PolarTM HiperFETTM  
Power MOSFET  
VDSS = 800V  
ID25 = 39A  
RDS(on) 190m  
IXFN44N80P  
D
S
trr  
250ns  
G
S
N-Channel Enhancement Mode  
Fast Intrinsic Rectifier  
miniBLOC  
E153432  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
800  
800  
V
V
VDGR  
S
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
D
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
39  
A
A
G = Gate  
S = Source  
D = Drain  
100  
IA  
EAS  
TC = 25C  
TC = 25C  
22  
3.4  
A
J
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
10  
V/ns  
W
694  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
International Standard Package  
Low Intrinsic Gate Resistance  
miniBLOC with Aluminum Nitride  
Isolation  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
IISOL 1mA,  
t = 1s  
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in  
Nm/Ib.in  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
Weight  
30  
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
800  
3.0  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 800A  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
5.0  
200 nA  
Power Supplies  
AC Motor Control  
High Speed Power Switching  
IDSS  
50 A  
1.5 mA  
TJ = 125C  
Appliccation  
RDS(on)  
VGS = 10V, ID = 22A, Note 1  
190 m  
DS99503F(8/17)  
© 2017 IXYS CORPORATION, All Rights Reserved  

与IXFN44N80P相关器件

型号 品牌 描述 获取价格 数据表
IXFN44N80Q3 IXYS N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated

获取价格

IXFN44N80Q3 LITTELFUSE Q3级系列功率MOSFET为最终用户提供具有一流功率开关性能、出色热特性、强大器件耐用性和

获取价格

IXFN48N50 IXYS HiPerFET Power MOSFETs

获取价格

IXFN48N50 LITTELFUSE 功能与特色: 应用: 优点:

获取价格

IXFN48N50Q IXYS HiPerFET Power MOSFETs Q-Class

获取价格

IXFN48N50Q LITTELFUSE 功能与特色: 应用: 优点:

获取价格