5秒后页面跳转
IXFN44N60 PDF预览

IXFN44N60

更新时间: 2024-11-19 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 200K
描述
功能与特色: 应用: 优点:

IXFN44N60 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

IXFN44N60 数据手册

 浏览型号IXFN44N60的Datasheet PDF文件第2页浏览型号IXFN44N60的Datasheet PDF文件第3页浏览型号IXFN44N60的Datasheet PDF文件第4页浏览型号IXFN44N60的Datasheet PDF文件第5页 
HiPerFETTM  
Power MOSFETs  
Single Die MOSFET  
IXFN 44N60  
VDSS = 600 V  
ID25 44 A  
RDS(on) = 130 mW  
=
D
trr £ 250 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
G
S
S
Symbol  
TestConditions  
MaximumRatings  
miniBLOC, SOT-227 B  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
V
V
S
TJ = 25°C to 150°C; RGS = 1 MW  
G
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
S
ID25  
TC = 25°C  
44  
A
D
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
176  
44  
A
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAR  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
EAS  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
,
5
V/ns  
TJ £ 150°C, RG = 2 W  
Features  
PD  
TC = 25°C  
600  
W
Internationalstandardpackage  
miniBLOC, withAluminiumnitride  
isolation  
Low RDS (on) HDMOSTM process  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
TJ  
1.6 mm (0.63 in) from case for 10 s  
-
°C  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Low package inductance  
Fast intrinsic Rectifier  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Applications  
DC-DC converters  
Battery chargers  
Switched-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
DC choppers  
Temperatureandlightingcontrols  
VDSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
600  
2.5  
V
V
VGH(th)  
4.5  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±100 nA  
100 mA  
Advantages  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
130 mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98610B(7/00)  
1 - 4  

与IXFN44N60相关器件

型号 品牌 获取价格 描述 数据表
IXFN44N80 IXYS

获取价格

HiPerFETTM Power MOSFETs Single MOSFET Die
IXFN44N80 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFN44N80P LITTELFUSE

获取价格

Power Field-Effect Transistor, 39A I(D), 800V, 0.19ohm, 1-Element, N-Channel, Silicon, Met
IXFN44N80P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFN44N80Q3 IXYS

获取价格

N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated
IXFN44N80Q3 LITTELFUSE

获取价格

Q3级系列功率MOSFET为最终用户提供具有一流功率开关性能、出色热特性、强大器件耐用性和
IXFN48N50 IXYS

获取价格

HiPerFET Power MOSFETs
IXFN48N50 LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFN48N50Q IXYS

获取价格

HiPerFET Power MOSFETs Q-Class
IXFN48N50Q LITTELFUSE

获取价格

功能与特色: 应用: 优点: