Datasheet > IXFN44N60

IXFN44N60

更新时间： 2024-04-02 21:14:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	200K
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数据手册

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IXFN44N60 数据手册

HiPerFET^TM

Power MOSFETs

Single Die MOSFET

IXFN 44N60

V_DSS= 600 V

I_D2544 A

R_DS(on)= 130 mW

t_rr£ 250 ns

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

Symbol

TestConditions

MaximumRatings

miniBLOC, SOT-227 B

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

T_C= 25°C

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

176

G = Gate

S = Source

D = Drain

TAB = Drain

E_AR

T_C= 25°C

E_AS

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

V/ns

T_J£ 150°C, R_G= 2 W

Features

P_D

T_C= 25°C

600

• Internationalstandardpackage

• miniBLOC, withAluminiumnitride

isolation

• Low R_{DS (on)}HDMOS^TMprocess

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

T_J

1.6 mm (0.63 in) from case for 10 s

°C

V_ISOL

50/60 Hz, RMS

I_ISOL£ 1 mA

t = 1 min

t = 1 s

2500

3000

• Low package inductance

• Fast intrinsic Rectifier

M_d

Mountingtorque

Terminalconnectiontorque

1.5/13 Nm/lb.in.

Weight

Applications

• DC-DC converters

• Battery chargers

• Switched-modeandresonant-mode

powersupplies

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min. typ. max.

• DC choppers

• Temperatureandlightingcontrols

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

600

2.5

V_GH(th)

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100 nA

100 mA

Advantages

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

130 mW

IXYS reserves the right to change limits, test conditions, and dimensions.

98610B(7/00)

1 - 4

12 3 4 5

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