Datasheet > IXFN44N80

IXFN44N80

更新时间： 2024-11-19 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	205K
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中文翻译

获取价格

数据手册

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IXFN44N80 数据手册

V_DSS

I_D25

R_DS(on)

= 800V

44A

≤ 0.165Ω

IXFN44N80

Power MOSFET

HiPerFET^TM

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

miniBLOC, SOT-227 B (IXFN)

E153432

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

800

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

I_AR

T_C= 25°C, Chip capability

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

176

G = Gate

S = Source

D = Drain

E_AR

E_AS

T_C= 25°C

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

Features

dV/dt

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 1Ω

V/ns

•International standard packages

•miniBLOC, with Aluminium nitride

isolation

P_D

T_C= 25°C

700

•Low R_{DS (on)}HDMOS^TMprocess

•Rugged polysilicon gate cell

structure

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

•Unclamped Inductive Switching

(UIS) rated

V_ISOL

50/60 Hz, RMS t = 1min

2500

3000

I_ISOL≤ 1mA

t = 1s

•Low package inductance

•Fast intrinsic Rectifier

M_d

Mounting torque

Terminal connection torque

1.5/13

1.3/11.5

Nm/lb.in.

Weight

Applications

•DC-DC converters

•Battery chargers

•Switched-mode and resonant-mode

power supplies

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

800

2.5

•DC choppers

•Temperature and lighting controls

4.5

I_GSS

I_DSS

V_GS= ±20V, V_DS= 0V

±200 nA

Advantages

V_DS= V_DSS

V_GS= 0V

100 μA

2 mA

T_J= 125°C

•Easy to mount

•Space savings

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25,Note 1

0.165

DS98594E(08/07)

12 3 4 5

中文翻译

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