Datasheet > IXFN44N100Q3

IXFN44N100Q3

更新时间： 2024-11-19 14:56:55

品牌	Logo	应用领域
力特 - LITTELFUSE		开关
页数	文件大小	规格书
6页	151K
描述
Q3级系列功率MOSFET为最终用户提供具有一流功率开关性能、出色热特性、强大器件耐用性和高能效的广泛器件。 Q3级系列的漏极-源极电压额定值为200V–1000V，漏极电流额定值为10A–100

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数据手册

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IXFN44N100Q3 数据手册

Advance Technical Information

HiperFET^TM

Power MOSFET

Q3-Class

V_DSS= 1000V

I_D25= 38A

IXFN44N100Q3

R_DS(on)≤ 220mΩ

t_rr

≤ 300ns

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

miniBLOC

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_DGR

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

G = Gate

S = Source

D = Drain

110

I_A

T_C= 25°C

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

E_AS

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

960

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

International Standard Package

Low Intrinsic Gate Resistance

miniBLOC with Aluminum Nitride

V_ISOL

50/60 Hz, RMS, t = 1minute

2500

3000

I_ISOL≤ 1mA,

t = 1s

Isolation

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G

M_d

Mounting Torque for Base Plate

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

Weight

Advantages

High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

1000

3.5

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

6.5

±200 nA

Power Supplies

DC Choppers

Temperature and Lighting Controls

I_DSS

50 μA

3 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 22A, Note 1

220 mΩ

DS100306(03/11)

12 3 4 5 6

中文翻译

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