Datasheet > IXFN40N110Q3

IXFN40N110Q3

更新时间： 2024-11-18 21:12:51

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	125K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

技术参数
数据手册

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IXFN40N110Q3 技术参数

生命周期：	Transferred	Reach Compliance Code：	compliant
风险等级：	8.37	Base Number Matches：	1

IXFN40N110Q3 数据手册

Advance Technical Information

HiperFET^TM

Power MOSFET

Q3-Class

V_DSS= 1100V

I_D25= 35A

R_DS(on) 260m

IXFN40N110Q3

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

miniBLOC

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

1100

V_DGR

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

G = Gate

S = Source

D = Drain

100

I_A

T_C= 25C

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

960

Features

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C



International Standard Package

Low Intrinsic Gate Resistance

miniBLOC with Aluminum Nitride



V_ISOL

50/60 Hz, RMS, t = 1minute

2500

3000



I_ISOL1mA,

t = 1s

Isolation

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G



M_d

Mounting Torque for Base Plate

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in



Weight

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

(T_J= 25C Unless Otherwise Specified)

Min.

1100

3.5

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V



DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode



6.5



200 nA

Power Supplies

DC Choppers

Temperature and Lighting Controls



I_DSS

50 A

3 mA



T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 20A, Note 1

260 m

DS100597(02/14)

12 3 4 5

中文翻译

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