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IXFN44N100P PDF预览

IXFN44N100P

更新时间: 2024-11-18 11:14:03
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 108K
描述
Polar Power MOSFET HiPerFET

IXFN44N100P 技术参数

是否无铅: 不含铅生命周期:Transferred
包装说明:FLANGE MOUNT, R-PUFM-X4针数:4
Reach Compliance Code:unknown风险等级:7.52
Is Samacsys:N其他特性:AVALANCHE RATED, UL RECOGNIZED
雪崩能效等级(Eas):2000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):37 A最大漏极电流 (ID):37 A
最大漏源导通电阻:0.22 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PUFM-X4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):890 W
最大脉冲漏极电流 (IDM):110 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFN44N100P 数据手册

 浏览型号IXFN44N100P的Datasheet PDF文件第2页浏览型号IXFN44N100P的Datasheet PDF文件第3页浏览型号IXFN44N100P的Datasheet PDF文件第4页 
PolarTM Power MOSFET  
HiPerFETTM  
VDSS = 1000V  
ID25 = 37A  
RDS(on) 220mΩ  
300ns  
IXFN44N100P  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
trr  
miniBLOC, SOT-227 B (IXFN)  
E153432  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
S
TJ = 25°C to 150°C  
1000  
1000  
V
V
G
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
S
ID25  
IDM  
TC = 25°C  
37  
A
A
D
D = Drain  
TC = 25°C, pulse width limited by TJM  
110  
G = Gate  
S = Source  
IAR  
TC = 25°C  
TC = 25°C  
22  
2
A
J
EAS  
Either Source terminal S can be used as the  
Source terminal or the Kelvin Source (gate  
return) terminal.  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
20  
V/ns  
W
890  
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z International standard package  
z Encapsulating epoxy meets  
UL94V-0, flammability classification  
z miniBLOC with Aluminium nitride  
isolation  
TJM  
Tstg  
-55 ... +150  
TL  
1.6mm (0.062 in.) from case for 10s  
300  
°C  
z Fast recovery diode  
VISOL  
50/60 Hz, RMS  
t = 1min  
2500  
3000  
V~  
V~  
z Unclamped Inductive Switching (UIS)  
rated  
IISOL 1mA  
t = 1s  
z Low package inductance  
- easy to drive and to protect  
Md  
Mounting torque  
Terminal connection torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
Weight  
30  
g
Advantages  
z
Easy to mount  
Space savings  
High power density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, unless otherwise specified)  
Min.  
Typ. Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 1mA  
VGS = ± 30V, VDS = 0V  
1000  
3.5  
V
V
Applications  
6.5  
z Switched-mode and resonant-mode  
power supplies  
± 200 nA  
z DC-DC Converters  
z Laser Drivers  
IDSS  
VDS = VDSS  
VGS = 0V  
50 μA  
3 mA  
TJ = 125°C  
z AC and DC motor controls  
z Robotics and servo controls  
RDS(on)  
VGS = 10V, ID = 22A, Note 1  
220 mΩ  
DS99879A(4/08)  
© 2008 IXYS CORPORATION, All rights reserved  

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