Datasheet > IXFN36N100

IXFN36N100

更新时间： 2024-11-06 14:56:19

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
5页	213K
描述
功能与特色: 应用: 优点:

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXFN36N100 数据手册

HiPerFET^TM

Power MOSFETs

IXFN 36N100

V_DSS= 1000V

I_D2536A

R_DS(on)= 0.24Ω

Single Die MOSFET

N-ChannelEnhancementMode

AvalancheRated, Highdv/dt, Lowt_rr

Symbol

TestConditions

Maximum Ratings

miniBLOC,SOT-227B(IXFN)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

1000

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

T_C= 25°C, Chip capability

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

144

G = Gate

S = Source

D = Drain

TAB = Drain

E_AR

T_C= 25°C

E_AS

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

Features

P_D

T_C= 25°C

700

•Internationalstandardpackages

•miniBLOC, withAluminiumnitride

isolation

•Low R_{DS (on)}HDMOS^TMprocess

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

•Ruggedpolysilicongatecellstructure

•UnclampedInductiveSwitching(UIS)

rated

V_ISOL

M_d

50/60 Hz, RMS

I_ISOL≤ 1 mA

t = 1 min

t = 1 s

2500

3000

Mounting torque

Terminal connection torque

1.5/13 Nm/lb.in.

•Lowpackageinductance

•FastintrinsicRectifier

Weight

Applications

•DC-DC converters

•Batterychargers

•Switched-modeandresonant-mode

power supplies

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

1000

3.0

•DC choppers

V_GS(th)

5.5

•Temperatureandlightingcontrols

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

100 μA

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

•Easy to mount

•Space savings

•High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t ≤ 300 μs,

duty cycle d ≤ 2 %

0.24

DS98520D(04/03)

12 3 4 5

中文翻译

下载PDF

与IXFN36N100相关器件

型号	品牌	获取价格	描述	数据表
IXFN36N110P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFN36N60	IXYS	获取价格	HiPerFET Power MOSFET
IXFN36N60	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFN38N100P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFN38N100P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFN38N100Q2	LITTELFUSE	获取价格	Power Field-Effect Transistor, 38A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Me
IXFN38N100Q2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFN38N100Q2_08	IXYS	获取价格	HiPerFET Power MOSFET
IXFN38N80Q2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
IXFN38N80Q2	LITTELFUSE	获取价格	功能与特色: 应用: 优点: