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IXFN36N100 PDF预览

IXFN36N100

更新时间: 2024-09-16 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE 局域网开关脉冲晶体管
页数 文件大小 规格书
5页 213K
描述
功能与特色: 应用: 优点:

IXFN36N100 数据手册

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HiPerFETTM  
Power MOSFETs  
IXFN 36N100  
VDSS = 1000V  
ID25 36A  
=
RDS(on) = 0.24Ω  
Single Die MOSFET  
D
N-ChannelEnhancementMode  
G
AvalancheRated, Highdv/dt, Lowtrr  
S
S
Symbol  
TestConditions  
Maximum Ratings  
miniBLOC,SOT-227B(IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
1000  
1000  
V
V
S
G
VGS  
Continuous  
Transient  
±20  
±30  
V
V
VGSM  
S
ID25  
TC = 25°C, Chip capability  
36  
A
D
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
144  
36  
A
A
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
EAR  
TC = 25°C  
TC = 25°C  
64  
4
mJ  
J
EAS  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
Features  
PD  
TC = 25°C  
700  
W
Internationalstandardpackages  
miniBLOC, withAluminiumnitride  
isolation  
Low RDS (on) HDMOSTM process  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
Ruggedpolysilicongatecellstructure  
UnclampedInductiveSwitching(UIS)  
rated  
VISOL  
Md  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Lowpackageinductance  
FastintrinsicRectifier  
Weight  
30  
g
Applications  
DC-DC converters  
Batterychargers  
Switched-modeandresonant-mode  
power supplies  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
1000  
3.0  
V
V
DC choppers  
VGS(th)  
5.5  
Temperatureandlightingcontrols  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
100 μA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
2
mA  
Advantages  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t 300 μs,  
duty cycle d 2 %  
0.24  
Ω
DS98520D(04/03)  
© 2003 IXYS All rights reserved  

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