Datasheet > IXFN36N60

IXFN36N60

更新时间： 2024-11-05 22:45:43

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	195K
描述
HiPerFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IXFN36N60 数据手册

IXFK 32N60 IXFN 32N60

IXFK 36N60 IXFN 36N60

Preliminary Data

V_DSSI_D25R_DS(on)

t_rr

IXFK/FN 36N60 600V 36A 0.18Ω 250ns

IXFK/FN 32N60 600V 32A 0.25Ω 250ns

HiPerFET^TMPower MOSFET

N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low t_rr

TO-264 AA (IXFK)

Symbol

TestConditions

Maximum Ratings

IXFK IXFN

V_DSS

V_DGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GS= 1 MΩ

D (TAB)

V_GS

Continuous

Transient

±20

±30

±20

±30

V_GSM

miniBLOC, SOT-227 B (IXFN)

E153432

I_D25

I_DM

T_C= 25°C, Chip capability

32N60 32

36N60 36

128

144

T_C= 25°C, pulse width limited by T_JM32N60 128

36N60 144

I_AR

T_C= 25°C

E_AR

dv/dt

G = Gate

S = Source

D = Drain

TAB = Drain

Either Source terminal at miniBLOC

can be used as Main or Kelvin Source

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_C= 25°C

500

520

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

• International standard packages

• JEDEC TO-264 AA, epoxy meet

UL 94 V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

-55 ... +150

T_L

1.6 mm (0.063 in) from case for 10 s

50/60 Hz, RMSt = 1 min

300

°C

V_ISOL

2500

3000

I_ISOL≤ 1 mAt = 1 s

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS)

rated

M_d

Mounting torque

Terminal connection torque

0.9/6 1.5/13 Nm/lb.in.

- 1.5/13 Nm/lb.in.

Weight

• Low package inductance

• Fast intrinsic Rectifier

Applications

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

• DC-DC converters

• Synchronous rectification

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

V_DSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 8 mA

600

V_GH(th)

4.5

• Temperature and lighting controls

• Low voltage relays

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

V_DS= 0.8 V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

400 µA

Advantages

• Easy to mount

• Space savings

• High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 32N60

36N60

0.18

0.25

Ω

92807G(01/96)

IXYSCorporation

IXYSSemiconductor

3540 Bassett Street, Santa Clara,CA 95054

Edisonstr. 15, D-68623 Lampertheim, Germany

Tel: 408-982-0700

Fax: 408-496-0670

Tel: +49-6206-5030

Fax: +49-6206-503629

12 3 4

中文翻译

下载PDF

IXFN36N60 替代型号

型号	品牌	替代类型	描述	数据表
IXFN44N60	IXYS	类似代替	HiPerFET Power MOSFETs Single Die MOSFET
IXFN55N50	IXYS	类似代替	HiPerFET Power MOSFET
IXTN36N50	IXYS	类似代替	N-Channel Enhancement Mode

与IXFN36N60相关器件

型号	品牌	获取价格	描述	数据表
IXFN38N100P	IXYS	获取价格	Polar Power MOSFET HiPerFET
IXFN38N100P	LITTELFUSE	获取价格	功能与特色: 优点: 应用:
IXFN38N100Q2	LITTELFUSE	获取价格	Power Field-Effect Transistor, 38A I(D), 1000V, 0.25ohm, 1-Element, N-Channel, Silicon, Me
IXFN38N100Q2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFN38N100Q2_08	IXYS	获取价格	HiPerFET Power MOSFET
IXFN38N80Q2	IXYS	获取价格	N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
IXFN38N80Q2	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFN39N90	IXYS	获取价格	HiPerFET Power MOSFETs Single MOSFET Die
IXFN39N90	LITTELFUSE	获取价格	功能与特色: 应用: 优点:
IXFN39N90V	IXYS	获取价格	Power Field-Effect Transistor,

与IXFN36N60相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

IXFN36N60

IXFN36N60 数据手册

IXFN36N60 替代型号

与IXFN36N60相关器件

与IXFN36N60相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IXFN36N60

IXFN36N60 数据手册

IXFN36N60 替代型号

与IXFN36N60相关器件

与IXFN36N60相关文章

您还可以找

您在本页遇到什么问题？