IXFK 32N60 IXFN 32N60
IXFK 36N60 IXFN 36N60
Preliminary Data
VDSS ID25 RDS(on)
trr
IXFK/FN 36N60 600V 36A 0.18Ω 250ns
IXFK/FN 32N60 600V 32A 0.25Ω 250ns
HiPerFETTMPower MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
TO-264 AA (IXFK)
Symbol
TestConditions
Maximum Ratings
IXFK IXFN
VDSS
VDGR
TJ = 25°C to 150°C
600
600
600
600
V
V
G
TJ = 25°C to 150°C; RGS = 1 MΩ
D (TAB)
D
S
VGS
Continuous
Transient
±20
±30
±20
±30
V
V
VGSM
miniBLOC, SOT-227 B (IXFN)
E153432
ID25
IDM
TC = 25°C, Chip capability
32N60 32
36N60 36
32
36
128
144
20
A
A
A
A
A
S
G
TC = 25°C, pulse width limited by TJM 32N60 128
36N60 144
IAR
TC = 25°C
TC = 25°C
20
30
5
S
D
EAR
dv/dt
30
5
mJ
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC
can be used as Main or Kelvin Source
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
V/ns
PD
TC = 25°C
500
520
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
• International standard packages
• JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
-55 ... +150
TL
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMSt = 1 min
300
-
°C
VISOL
-
-
2500
3000
V~
V~
IISOL ≤ 1 mAt = 1 s
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
Md
Mounting torque
Terminal connection torque
0.9/6 1.5/13 Nm/lb.in.
- 1.5/13 Nm/lb.in.
Weight
10
30
g
• Low package inductance
• Fast intrinsic Rectifier
Applications
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
VDSS
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 8 mA
600
2
V
V
VGH(th)
4.5
• Temperature and lighting controls
• Low voltage relays
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
400 µA
2
mA
Advantages
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 32N60
36N60
0.18
0.25
Ω
Ω
92807G(01/96)
I©X1Y9S96reIsXeYrvSeCsothrpeorrigahtiot tno. cAhlal rnighetlsimreitsse,rtveesdt c. onditions, and dimensions.
IXYSCorporation
IXYSSemiconductor
3540 Bassett Street, Santa Clara,CA 95054
Edisonstr. 15, D-68623 Lampertheim, Germany
Tel: 408-982-0700
Fax: 408-496-0670
Tel: +49-6206-5030
Fax: +49-6206-503629