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IXFN36N60 PDF预览

IXFN36N60

更新时间: 2024-11-04 22:45:43
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页数 文件大小 规格书
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描述
HiPerFET Power MOSFET

IXFN36N60 数据手册

 浏览型号IXFN36N60的Datasheet PDF文件第2页浏览型号IXFN36N60的Datasheet PDF文件第3页浏览型号IXFN36N60的Datasheet PDF文件第4页 
IXFK 32N60 IXFN 32N60  
IXFK 36N60 IXFN 36N60  
Preliminary Data  
VDSS ID25 RDS(on)  
trr  
IXFK/FN 36N60 600V 36A 0.18250ns  
IXFK/FN 32N60 600V 32A 0.25250ns  
HiPerFETTMPower MOSFET  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
TO-264 AA (IXFK)  
Symbol  
TestConditions  
Maximum Ratings  
IXFK IXFN  
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
600  
600  
V
V
G
TJ = 25°C to 150°C; RGS = 1 MΩ  
D (TAB)  
D
S
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
VGSM  
miniBLOC, SOT-227 B (IXFN)  
E153432  
ID25  
IDM  
TC = 25°C, Chip capability  
32N60 32  
36N60 36  
32  
36  
128  
144  
20  
A
A
A
A
A
S
G
TC = 25°C, pulse width limited by TJM 32N60 128  
36N60 144  
IAR  
TC = 25°C  
TC = 25°C  
20  
30  
5
S
D
EAR  
dv/dt  
30  
5
mJ  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Either Source terminal at miniBLOC  
can be used as Main or Kelvin Source  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
V/ns  
PD  
TC = 25°C  
500  
520  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
International standard packages  
JEDEC TO-264 AA, epoxy meet  
UL 94 V-0, flammability classification  
miniBLOC with Aluminium nitride  
isolation  
-55 ... +150  
TL  
1.6 mm (0.063 in) from case for 10 s  
50/60 Hz, RMSt = 1 min  
300  
-
°C  
VISOL  
-
-
2500  
3000  
V~  
V~  
IISOL 1 mAt = 1 s  
Low RDS (on) HDMOSTM process  
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Md  
Mounting torque  
Terminal connection torque  
0.9/6 1.5/13 Nm/lb.in.  
- 1.5/13 Nm/lb.in.  
Weight  
10  
30  
g
Low package inductance  
Fast intrinsic Rectifier  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
DC-DC converters  
Synchronous rectification  
Battery chargers  
Switched-mode and resonant-mode  
power supplies  
DC choppers  
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
600  
2
V
V
VGH(th)  
4.5  
Temperature and lighting controls  
Low voltage relays  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
VDS = 0.8 VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
400 µA  
2
mA  
Advantages  
Easy to mount  
Space savings  
High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle 2 % 32N60  
36N60  
0.18  
0.25  
92807G(01/96)  
©1996IXYSCorporation. All rightsreserved.
IXYSCorporation  
IXYSSemiconductor  
3540 Bassett Street, Santa Clara,CA 95054  
Edisonstr. 15, D-68623 Lampertheim, Germany  
Tel: 408-982-0700  
Fax: 408-496-0670  
Tel: +49-6206-5030  
Fax: +49-6206-503629  

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