Datasheet > IXFN32N80P

IXFN32N80P

更新时间： 2024-11-06 14:56:35

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	160K
描述
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中文翻译

获取价格

数据手册

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IXFN32N80P 数据手册

PolarHV^TMHiPerFET

Power MOSFET

IXFN32N80P

V_DSS= 800 V

I_D25= 25 A

R_DS(on)≤ 270 mΩ

t_rr

≤ 250 ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

miniBLOC, SOT-227 B (IXFN)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

800

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GSS

V_GSM

Continuous

Transient

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

250

I_AR

T_C= 25°C

G = Gate

D = Drain

S = Source

E_AR

E_AS

T_C= 25°C

100

Either Source terminal S can be used as the

Source terminal or the Kelvin Source (gate

return) terminal.

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

T_C= 25°C

625

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

• International standard package

• Encapsulating epoxy meets

UL94V-0, flammability classification

• miniBLOC with Aluminium nitride

isolation

T_L

1.6 mm (0.062 in.) from case for 10 s

300

2500

3000

°C

V_ISOL

50/60 Hz, RMS

t = 1 min

I_ISOL≤ 1 mA

t = 1 s

M_d

Mounting torque

Terminal connection torque

1.5 / 13 Nm/lb.in.

Fast recovery diode

Unclamped Inductive Switching (UIS)

rated

Weight

Low package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

Easy to mount

Space savings

High power density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

V_GS= 30 V, V_DS= 0 V

800

3.0

5.0

200

I_DSS

V_DS= V_DSS

V_GS= 0 V

μA

T_J= 125°C

R_DS(on)

V_GS= 10 V, I_D= 16A, Note 1

270 mΩ

DS99605E(08/06)

12 3 4 5

中文翻译

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