Datasheet > IXFN34N100

IXFN34N100

更新时间： 2022-11-25 16:45:36

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	103K
描述
HiPerFET Power MOSFETs Single Die MOSFET

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数据手册

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IXFN34N100 数据手册

HiPerFET^TM

Power MOSFETs

Single Die MOSFET

IXFN 34N100

V_DSS= 1000V

I_D2534A

R_DS(on)= 0.28W

N-ChannelEnhancementMode

AvalancheRated, Highdv/dt, Lowt_rr

Symbol

TestConditions

Maximum Ratings

miniBLOC,SOT-227B(IXFN)

E153432

V_DSS

V_DGR

T_J= 25°C to 150°C

1000

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

T_C= 25°C, Chip capability

I_DM

I_AR

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

136

G = Gate

S = Source

D = Drain

TAB = Drain

E_AR

T_C= 25°C

E_AS

Either Source terminal at miniBLOC can be used

as Main or Kelvin Source

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

V/ns

T_J£ 150°C, R_G= 2 W

Features

P_D

T_C= 25°C

700

Internationalstandardpackages

miniBLOC, withAluminiumnitride

isolation

Low R_{DS (on)}HDMOS^TMprocess

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Ruggedpolysilicongatecellstructure

UnclampedInductiveSwitching(UIS)

rated

V_ISOL

M_d

50/60 Hz, RMS

I_ISOL£ 1 mA

t = 1 min

t = 1 s

2500

3000

Mounting torque

Terminal connection torque

1.5/13 Nm/lb.in.

Lowpackageinductance

FastintrinsicRectifier

Weight

Applications

DC-DC converters

Batterychargers

Switched-modeandresonant-mode

power supplies

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

V_DSS

V_GS= 0 V, I_D= 3 mA

V_DS= V_GS, I_D= 8 mA

1000

2.5

DC choppers

V_GH(th)

5.0

Temperatureandlightingcontrols

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

100 mA

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Advantages

Easy to mount

Space savings

High power density

R_DS(on)

V_GS= 10 V, I_D= 0.5 • I_D25

Pulse test, t £ 300 ms,

duty cycle d £ 2 %

0.28

98763A (02/01)

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