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IXFN340N07_04 PDF预览

IXFN340N07_04

更新时间: 2024-01-19 17:09:20
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页数 文件大小 规格书
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描述
HiPerFET⑩ Power MOSFETs Single Die MOSFET

IXFN340N07_04 数据手册

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HiPerFETTM  
IXFN 340N07  
VDSS = 70 V  
Power MOSFETs  
Single Die MOSFET  
ID25  
RDS(on)  
= 340 A  
4 mΩ  
200 ns  
=
D
trr  
N-ChannelEnhancementMode  
AvalancheRated, Highdv/dt, Lowtrr  
G
S
S
Symbol  
TestConditions  
Maximum Ratings  
miniBLOC,SOT-227B(IXFN)  
E153432  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
70  
70  
V
V
S
G
VGS  
Continuous  
Transient  
20  
30  
V
V
VGSM  
S
ID25  
IL(RMS)  
IDM  
TC = 25°C, Chip capability  
Terminal current limit  
340  
100  
A
A
A
A
D
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
1360  
200  
IAR  
G = Gate  
D = Drain  
S = Source  
EAR  
TC = 25°C  
TC = 25°C  
64  
4
mJ  
J
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
EAS  
dv/dt  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
10  
V/ns  
PD  
TC = 25°C  
700  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
International standard package  
miniBLOC, withAluminiumnitride  
isolation  
TJM  
Tstg  
-55 ... +150  
Low RDS (on) HDMOSTM process  
Ruggedpolysilicongatecellstructure  
UnclampedInductiveSwitching(UIS)  
rated  
Lowpackageinductance  
Fast intrinsic Rectifier  
VISOL  
50/60 Hz, RMS  
IISOL 1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
Md  
Mounting torque  
Terminal connection torque  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
Weight  
30  
g
Applications  
Symbol  
TestConditions  
Characteristic Values  
DC-DC converters  
Batterychargers  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Switched-modeandresonant-mode  
VDSS  
VGS = 0 V, ID = 3 mA  
VDS = VGS, ID = 8 mA  
70  
V
V
power supplies  
VGH(th)  
2.0  
4.0  
DC choppers  
Temperature and lighting controls  
Linear current regulators  
IGSS  
IDSS  
VGS = 20 VDC, VDS = 0  
200 nA  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 μA  
2
mA  
Advantages  
RDS(on)  
VGS = 10 V, I = 100A  
Pulse test, t D300 μs,  
duty cycle d 2 %  
4
mΩ  
Easy to mount  
Space savings  
High power density  
© 2004 IXYS All rights reserved  
DS98547D(05/04)  

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