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IXBH42N170 PDF预览

IXBH42N170

更新时间: 2024-11-04 21:55:35
品牌 Logo 应用领域
IXYS 晶体双极型晶体管
页数 文件大小 规格书
5页 582K
描述
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

IXBH42N170 数据手册

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HighVoltage,HighGain  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 1700 V  
IC25 = 75 A  
VCE(sat) = 3.6 V  
IXBH 42N170  
IXBT 42N170  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXBT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
E
(TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
75  
42  
180  
A
A
A
TO-247AD(IXBH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 10 Ω  
ICM  
=
=
90  
A
V
CGlaEmped inductive load  
VCES  
1350  
TAB)  
(RBSOA)  
G
C
E
TSC  
V
= 15 V, V  
= 1200V, TJ = 125°C  
(SCSOA)  
RGGE= 10 noCnESrepetitive  
TC = 25°C  
10  
µs  
G = Gate,  
C = Collector,  
E=Emitter,  
TAB = Collector  
PC  
360  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
High Blocking Voltage  
JEDEC TO-268 surface and  
JEDEC TO-247 AD  
z
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
350  
°C  
z
Low conduction losses  
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
z
z
High current handling capability  
MOS Gate turn-on  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
- drive simplicity  
z
Molding epoxies meet UL 94 V-0  
flammability classification  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
AC motor speed control  
z
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
power supplies  
z
z
BVCES  
VGE(th)  
I
= 250 µA, VGE = 0 V  
1700  
2.5  
V
V
ICC = 750 µA, VCE = VGE  
5.5  
Capacitor discharge circuits  
ICES  
VCE = 0.8 VCES  
VGE = 0 V  
T = 25°C  
TJJ = 125°C  
50 µA  
Advantages  
1.5 mA  
z
Lower conduction losses than MOSFETs  
z
High power density  
IGES  
VCE = 0 V, VGE = 20 V  
IC = IC90, VGE = 15 V  
100 nA  
z
Suitable for surface mounting  
z
VCE(sat)  
3.6  
V
V
Easy to mount with 1 screw,  
TJ = 125°C  
3.7  
(isolated mounting screw hole)  
DS98710B(12/04)  
© 2004 IXYS All rights reserve  

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