IXBH9N140G

更新时间： 2024-11-17 22:12:15

品牌	Logo	应用领域
IXYS		晶体双极型晶体管高压
页数	文件大小	规格书
4页	66K
描述
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

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中文翻译

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数据手册

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IXBH9N140G 数据手册

HighVoltage BIMOSFET^TM

Monolithic Bipolar

MOSTransistor

IXBH 9N140G V_CES= 1400/1600V

IXBH 9N160G I_C25= 9 A

V_CE(sat)= 4.9 V typ.

t_fi

= 70 ns

N-Channel, Enhancement Mode

MOSFET compatible

TO-247 AD

C (TAB)

G = Gate,

E = Emitter,

C = Collector,

TAB = Collector

Preliminary Data

Symbol

Conditions

Maximum Ratings

9N140G 9N160G

Features

• High Voltage BIMOSFET^TM

- replaces high voltage Darlingtons

and series connected MOSFETs

- lower effective R_DS(on)

• MOS Gate turn-on

- drive simplicity

V_CES

V_CGR

T_J= 25°C to 150°C

1400

1600

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

- MOSFET compatible for 10V

turn on gate voltage

I_C25

I_C90

I_CM

T_C= 25°C,

T_C= 90°C

• Monolithic construction

- high blocking voltage capability

- very fast turn-off characteristics

• International standard package

JEDEC TO-247 AD

T_C= 25°C, 1 ms

SSOA

(RBSOA)

V_GE= 10 V, T_VJ= 125°C, R_G= 27 Ω V_CE= 0.8•V_CESI_CM= 12

Clamped inductive load, L = 100 µH

• Reverse conducting capability

P_C

T_C= 25°C

100

T_J

-55 ... +150

150

°C

T_JM

T_stg

T_L

Applications

-55 ... +150

300

• Flyback converters

• DC choppers

1.6 mm (0.063 in) from case for 10 s

Mounting torque

• Uninterruptiblepowersupplies(UPS)

• Switched-modeandresonant-mode

powersupplies

M_d

1.15/10 Nm/lb.in.

Weight

• CRTdeflection

• Lampballasts

Symbol

BV_CES

Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Advantages

I_C= 0.25 mA, V_GE= 0 V 9N140G

9N160G

1400

1600

• Easy to mount with 1 screw

(isolatedmountingscrewhole)

• Space savings

V_GE(th)

I_CES

I_C= 0.5 mA, V_CE= V_GE

3.5

5.5

• High power density

V_CE= 0.8 • V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

100 µA

0.1

I_GES

V_CE= 0 V, V_GE= ±20 V

± 500 nA

V_CE(sat)

I_C= I_C90, V_GE= 15 V

4.9

5.6

T_J= 125°C

IXYS Semiconductor GmbH

1 - 4

IXYS Corporation

Edisonstr. 15,

Phone: +49-6206-503-0, Fax: +49-6206-503627

D-68623 Lampertheim

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

12 3 4

中文翻译

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与IXBH9N140G相关器件

型号	品牌	获取价格	描述	数据表
IXBH9N160	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.6KV V(BR)CES \| 9A I(C) \| TO-247AD
IXBH9N160G	IXYS	获取价格	High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
IXBH9N160G	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO
IXBJ40N140	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.4KV V(BR)CES \| 33A I(C) \| TO-268
IXBJ40N160	ETC	获取价格	TRANSISTOR \| IGBT \| N-CHAN \| 1.6KV V(BR)CES \| 33A I(C) \| TO-268
IXBK55N300	IXYS	获取价格	High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
IXBK64N250	LITTELFUSE	获取价格	Insulated Gate Bipolar Transistor,
IXBK64N250	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, TO-264,
IXBK75N170	IXYS	获取价格	IGBT 1700V 200A 1040W TO264
IXBK75N170	LITTELFUSE	获取价格	BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMO

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